Abstract:The energetic Cu55 clusters deposition on a Fe (001) surface was investigated by the molecular dynamics simulation. A many-body potential based on Finnis–Sinclair model is used to describe the interactions among atoms. The clusters with incident energies ranging from 0.5 to 30.0eV/atom, respectively, are deposited on the substrates with various temperatures (300, 700 and 1000K). The collective collisions play a dominant role in the interaction between the energetic cluster and the solid surface is demonstrated by analyzing the number of defects in the substrate and the “snapshots” during the deposition process. The energy of the cluster rapidly transfers to the substrate through the collective collisions. Then the atoms in the collision region are activated and get the migration energies to complete their migration and reconstruction. In addition, the effects of the incident energy and substrate temperature on the number of the cluster implantation atoms, the number of defects in the substrate, the spreading index and structure parameter of the cluster are investigated. The results show that the incident energy mainly influences the penetration and diffusion of the cluster, and the number of defects in the substrate and the epitaxial degree of the cluster are affected by both the incident energy and substrate temperature. By the contrast analysis, the moderate incident energy (about 5.0eV/atom) and the low substrate temperature (300K) are suited to grow high-quality epitaxial layers.

Investigating the influence of substrate orientation and temperature on Cu cluster deposition

The effects of Fe substrate orientations on Cu<sub>55</sub> cluster deposition with different incident energies

The Effects of Substrate Size and Temperature on the Deposition of Cu Clusters on a Si Substrate

Cluster Size and Substrate Temperature Affecting Thin Film Formation During Copper Cluster Deposition on a Si（001） Surface

Molecular Dynamics Simulation of Energetic Cu55 Clusters Deposition on a Fe (0 0 1) Surface

The comparative study of low-energy single Cu atom and Cu13 cluster depositing on the substrate of Fe ( 001 ) surface

The Effect of Incident Energy and Cluster Size on the Deposition Cu Clusters on the Fe (001) Surface

Atomistic Study of the Copper Cluster Deposition on Si(001) and Si(111) Surface

Molecular dynamics investigation of deposition and annealing behaviors of Cu atoms onto Cu(001) substrate

Low energy Cu clusters slow deposition on a Fe (001) surface investigated by molecular dynamics simulation

Molecular dynamics investigation of deposition and annealing behaviors of Cu atoms onto Cu(0 0 1) substrate

Comparative Study of Cu13 and Co13 Clusters Deposition and Diffusion on the Cu(001) Surface

Growth and Properties of Cu Thin Film Deposited on Si(001) Substrate: A Molecular Dynamics Simulation Study

MD Simulation of Effect of Crystal Orientations and Substrate Temperature on Growth of Cu/Ni Bilayer Films

The Effect of Deposition Velocity and Cluster Size on Thin Film Growth by Cu Cluster Deposition

Deposition of an Energetic Al Cluster on Si(111) Substrate: A Molecular Dynamics Simulation

Influence of Substrate Temperature on the Properties of ZnTe:Cu Films Prepared by a Magnetron Co-Sputtering Method

Molecular Dynamics Simulation of Temperature Effects on Deposition of Cu Film on Si by Magnetron Sputtering

Molecular dynamics simulations of low-energy Pt cluster deposition

Theoretical Study on Thin-Film Formation by Parallel Molecular Dynamics Simulation

Effects of substrate temperature on morphology, structure and chemical composition of Cu2S films