Abstract:Among all the iron-based superconductors (IBSs), Fe-chalcogenides (Fe-Ch) possess the advan tages of simple structure, non-toxicity, low anisotropy and the potential for high-field applications.One of the most effective methods for preparing Fe-Ch films is pulsed laser deposition (PLD). However, high quality film growth is challenged by the significant volatility difference between the iron and chalcogens (S, Se, Te), which affects stoichiometric transfer from target to substrate and subsequently impacts superconductivity. Currently, there is limited research on the correlation between the growth mechanism and preparation conditions of Fe-Ch films, particularly in explaining chalcogen volatility during deposition. Technically, PLD offers various adjustable parameters, among which the substrate temperature (Ts) is the most critical one affecting film quality. It governs particle behavior on the substrate including adsorption, diffusion, bonding reactions, crystallization processes while also strongly affecting volatilization rates. In this study, we fabricated a series of FeSe films using PLD at different Ts ranging from 25 °C to 750 °C.We reveal in detail the impact of competitive processes between Se volatilization and reactive crystallization of Fe/Se on film quality. The optimal film was obtained at Ts=500 °C with a composition ratio of Fe1.01Se. We also investigate the correlations between Ts and film crystallinity, surface morphology, along with their influence on superconductivity. Additionally, the pinning mechanism in FeSe film grown at the optimal Ts was briefly analyzed. Our results provide reliable experimental evidence regarding the growth mechanism of FeSe films while revealing comprehensive insights into how Ts affects both film quality and performance.

Influences of crystallizing status of precursor Fe films on microstructure and properties of FeS2 films

The Influence of Sulfidation Duration on Microstructural Morphology and Parameters of FeS2 Films Prepared by Sulfurizing Electrodeposited Precursors

Effect of sulfurization temperature on the surface roughening, electrical and optical properties of FeS 2 films deposited by sol-gel method

Properties of the FeS2 films sulfurized from the precursive Fe and Fe3O4

Microstructure and optical absorption of FeS2 films formed by sulfurizing precursive iron of various crystallite scales

Evolution of Microstructure and Electrical Properties of FeS2 Thin Films in Sulfuration Processes

Study on the formation of FeS2 thin films prepared by sulfidation of Fe layers under different temperatures

MICROSTRUCTURE AND ELECTRICAL PROPERTIES OF FeS2 THIN FILMS SULFURATED FROM THE IRON FILMS WITH DIFFERENT THICKNESS

Effect of Film Thickness on Crystal Growth and Optical Properties of FeS2 Thin Films

Crystallographic behavior of FeS2 films formed on different substrates

THE EFFECT OF SULFIDATION PARAMETERS ON THE FORMATION OF POLYCRYSTALLINE FeS2 THIN FILMS

Microstructure and optical absorption of FeS2 films prepared by sulfurizing Fe3O4 at different pressures

GRYSTAL GROWTH AND MICROSTRUCTURE OF FeS2 AND In2S3 COMPOSITE FILMS DURING SULFIDATION ANNEALING

Microstructure and Optical Absorption of FeS_2 Films Prepared by Sulfurizing Fe_3O_4 at Different Pressures

Effects of Crystal Planar Defects on Electrical Properties of the FeS2 Thin Films

Effect of the Substrate Temperature on the Crystallization of TiO2 Films Prepared by DC Reactive Magnetron Sputtering

On the Pyrite (fes2) Thin Films Prepared by Sulfurizing the Electrodeposited Precursive Films at Different Sulfur Vapor Pressure

Effect of substrate temperature on the growth mechanism of FeSe superconducting films

Pyrite Films Grown by Sulfurizing Precursive Iron of Different Crystallizing Status

Formation of Pyrite Thin Films by Sulfidation Annealing of Iron Films

Structural, Optical and Electrical Properties of Polycrystalline Pyrite (fes2) Films Obtained by Thermal Sulfuration of Iron Films