Crystallographic behavior of FeS2 films formed on different substrates

L.Y. Huang,L. Meng

DOI: https://doi.org/10.1016/j.matchemphys.2010.06.056

IF: 4.778

2010-01-01

Materials Chemistry and Physics

Abstract:FeS2 polycrystalline films were prepared on amorphous glass, monocrystalline Si (100), polycrystalline Al and microcrystalline TiO2 film substrates by sulfuration annealing of magnetron sputtered iron films. The crystal microstructure and orientation distribution of the films were investigated. The FeS2 films formed on Si (100) and glass substrates have relatively fine and uniform grains and small lattice distortion at the interface between the film and substrate but insignificant preferred orientation. The FeS2 films formed on Al or TiO2 substrates have relatively inhomogeneous microstructure, large lattice distortion at the interface and a (200) or (220) preferred orientation. High strain energy at the interface should be responsible for the preferred orientation and inhomogeneous microstructure in the films.