Abstract:The precursor Fe films deposited at different substrate temperature were annealed at 400°C for 20 h in sulfur atmosphere to prepare FeS2 thin films. The effects of crystallizing status of the precursor Fe films on the microstructure and electrical properties of FeS2 films were investigated. Higher substrate temperature results in larger crystallite scale of the precursor Fe films. Sulfuration reaction at 400°C induces the change of precursor Fe with various crystallizing levels into fine FeS2 crystallites. With the increase of substrate temperature in depositing the precursor Fe films, the geometrical completeness of the film bulk increases, the carrier concentration decreases and the Hall mobility increases for the FeS2 films formed from the precursor Fe films. The electrical resistivity shows a maximum when the FeS2 films are obtained from the precursor Fe films deposited at substrate temperatures in 300-400°C. The mechanism that different substrate temperature changes the crystallizing status of the precursor Fe films and results finally in various behaviors of crystal lattice defects and levels of phase transformation stress in the FeS2 films should be responsible for the change of electrical properties with substrate temperature.

GRYSTAL GROWTH AND MICROSTRUCTURE OF FeS2 AND In2S3 COMPOSITE FILMS DURING SULFIDATION ANNEALING

The Influence of Sulfidation Duration on Microstructural Morphology and Parameters of FeS2 Films Prepared by Sulfurizing Electrodeposited Precursors

THE EFFECT OF SULFIDATION PARAMETERS ON THE FORMATION OF POLYCRYSTALLINE FeS2 THIN FILMS

On the Pyrite (fes2) Thin Films Prepared by Sulfurizing the Electrodeposited Precursive Films at Different Sulfur Vapor Pressure

Properties of the FeS2 films sulfurized from the precursive Fe and Fe3O4

FeS2 (pyrite) Electrodeposition Thin Films and Study of Growth Mechanism

Evolution of Microstructure and Electrical Properties of FeS2 Thin Films in Sulfuration Processes

Crystallographic behavior of FeS2 films formed on different substrates

Microstructure and optical absorption of FeS2 films formed by sulfurizing precursive iron of various crystallite scales

Study on the formation of FeS2 thin films prepared by sulfidation of Fe layers under different temperatures

Microstructure and optical absorption of FeS2 films prepared by sulfurizing Fe3O4 at different pressures

Microstructure and Optical Absorption of FeS_2 Films Prepared by Sulfurizing Fe_3O_4 at Different Pressures

MICROSTRUCTURE AND ELECTRICAL PROPERTIES OF FeS2 THIN FILMS SULFURATED FROM THE IRON FILMS WITH DIFFERENT THICKNESS

Formation of Pyrite Thin Films by Sulfidation Annealing of Iron Films

Influences of crystallizing status of precursor Fe films on microstructure and properties of FeS2 films

Preparation and Characteristic of FexSy/TiO2 Composite Material Film

Pyrite (FeS2) thin films deposited by sol–gel method

Effect of Film Thickness on Crystal Growth and Optical Properties of FeS2 Thin Films

Controlled Growth of FeS Microsheet Arrays on Fe Foils

Molecular Beam Epitaxy Growth and Post-Growth Annealing of Fese Films on Srtio3: A Scanning Tunneling Microscopy Study

Effect of Sulfurization Temperature on the Surface Roughening, Electrical and Optical Properties of FeS2 Films Deposited by Sol–gel Method