Effect of Film Thickness on Crystal Growth and Optical Properties of FeS2 Thin Films

张秀娟,孟亮,刘艳辉

DOI: https://doi.org/10.3321/j.issn:0253-4177.2004.06.008

2004-01-01

Abstract:The FeS2 films with different thickness are prepared by sulfur-annealing the Fe films deposited on single-crystal silicon substrates by magnetron sputtering. The behaviors of crystal growth and optical absorption are determined. The distributed proportion of the crystalline orientation shows certain alteration with increasing in film thickness. The grain size increases but the lattice constant decreases with increasing in film thickness up to 330 nm. However, the grain size decreases but the lattice constant increases as film thickness is over 330 nm. Both the optical absorption coefficient and bandgap decrease with increasing in film thickness. The changes of phase transformation stress, specific surface area, and crystal defect density with film thickness can be considered to be generally responsible for the behaviors of crystal growth and optical properties.