THE INFLUENCE OF THE THICKNESS OF FeS2 THIN FILMS ON THE OPTICAL AND ELECTRICAL PROPERTIES

黄伟,刘艳辉,孟亮
DOI: https://doi.org/10.3321/j.issn:0254-0096.2002.05.001
2002-01-01
Abstract:Fe layers were converted to FeS2 thin films of different thickness by thermal sulfidation. The influence of the thickness on the crystal structure, resistivity, carrier concentration, absorption coefficient and energy gap of the thin films was investigated. The results indicate that with the increase of the thickness, the electric conductivity, carrier concentration and absorption coefficient decrease. The energy gap increases with the increase of the thickness which is in the range of 70-130 nm while the energy gap decreases with the increase of the thickness which is above 130 nm.
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