Research and Development of Electrical Properties of Polycrystalline FeS_2 Thin Films

Liang Meng
2006-01-01
Abstract:Improving the photoelectric transformation efficiency is the key to the practical application of FeS2 thin films as a promising photoelectric conversion material. Therefore, the electrical properties and the mechanisms responsible for electronic transport in FeS2 thin films should first be understood in order to seek effective ways to the improvement of photoelectric transformation efficiency. In this paper,the research status and development in the electrical properties of FeS2 thin films were reviewed. The electrical properties dependent on the preparation processes of sulfurizing and doping were introduced. Some theoretical models,such as the theory of grain boundaries,hopping mechanism and the theory of point defects, related to the electron transport mechanisms were discussed. Some suggestions for the further research in the electrical characterization were also made.
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