Effects of Crystal Planar Defects on Electrical Properties of the FeS2 Thin Films

JING Yuanyuan,LIU Yanhui,MENG Liang
DOI: https://doi.org/10.3321/j.issn:1005-3093.2007.01.015
2007-01-01
Abstract:FeS_2 thin films were prepared by sulfuration annealing iron thin films.The effects of crystal planar defects on electrical properties were investigated by measuring the electrical resistivity and the carrier concentration in the FeS_2 films with different specific surface area and specific grain-boundary area.The change behavior of the electrical resistivity and the carrier concentration with the specific surface area is generally similar to that with the specific grain-boundary area in a certain range.With the increase of the specific surface area and the specific grain-boundary area,the carrier concentration increases and the electrical resistivity decreases.The suggested mechanism responsible for the change behavior of the electrical resistivity and the carrier concentration is that the ratio variation of crystal planar defects in the FeS_2 films results in the possible variations in the concentration of crystal point defects,the distribution of energy levels added in forbidden band,the amount of insufficient reaction products in sulfuration annealing and the stress level of phase transformation.
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