Abstract:A kinetic Monte Carlo (kMC) simulation with a cluster-multiple labeling technique was carried out to study the dynamic behavior of Si-C clusters during the early stage of epitaxial growth. In the model, a crystal lattice was established to fix the physical location of atoms and interatomic bonding. Events, such as adatoms adsorption, diffusion on the planar surface, and attachment to and detachment from clusters of adatoms were considered in the model. The Si and C atoms were treated individually to achieve more elaborate information for dynamic behavior of the clusters in the crystal surface. Moreover, a cluster multiple labeling technique, also known as the Hoshen - Kopelman algorithm was used to identify Si-C clusters. Then the properties of the clusters were calculated and analyzed by the algorithm. The simulation results showed that the number of Si-C clusters gradually decreases with increasing substrate temperature and decreasing deposition rate, and that the average size of Si-C clusters at high temperatures is much larger than that at low temperatures. Furthermore, the Si:C ratio on the growing surface has a significant effect on the surface morphology. At Si-rich conditions, the cluster density is relatively high, and the cluster shape is not homogeneously distributed. While with the increase of C mole fraction, the cluster density gradually decreases and the cluster shape becomes more uniform. Therefore, a higher concentration of C in deposition flux is beneficial to the early stage of nucleation. These findings are consistent with predictions for the case of the epitaxial growth of SiC.

Tight-binding molecular-dynamics study of amorphous carbon deposits over silicon surfaces

A molecular dynamics simulation of diamond/silicon(001) interface

Theoretical Investigation on the Interfacial Properties of Carbon Deposited on Β-Sic(111) Substrate

Molecular Dynamics Simulation of Thin Silicon Carbide Films Formation by the Electrolytic Method

Investigation of interfacial matching between 3C-SiC substrate crystals and its surface layer deposited Cu elements using molecular dynamics simulations

Molecular Dynamics Simulation of Deposition and Growth of Cu Thin Film on Si Substrate

SIMULATION AND EXPERIMENTAL RESEARCH ON ADHESION ENHANCEMENT BETWEEN DIAMOND FILMS AND WC-Co SUBSTRATES BY EMPLOYING AMORPHOUS SiC INTERLAYER

Effects of different incidence rates of carbon and silicon clusters on the surface properties of SiC films

Structural and tribological behaviours of silicon doped amorphous carbon films

Molecular dynamics simulation of deposition of amorphous carbon films on sapphire surfaces

Kinetic Monte Carlo simulation of {1 1 1}-oriented SiC film with chemical vapor deposition

Molecular Dynamics Study of the Effect of Carbon Atoms on the Surface Tension of Silicon–carbon Alloy

Kinetic Monte Carlo Simulation Study of the Early Stages of Epitaxial SiC (0001) Growth

Molecular Dynamics Simulations of Structures of Amorphous Carbon Films Via Deposition

Molecular dynamics simulations on sliding friction between amorphous Si-DLC films

Molecular Dynamics Simulation of Shear-Induced Graphitization of Amorphous Carbon Films

Molecular dynamics simulations of the growth of thin amorphous hydrogenated carbon films on diamond surface

Adsorption on 3C-Sic Surfaces in Chemical Vapor Deposition Process of CH3SiCl3–H2 System: a First-Principles Study

Kinetic Monte Carlo simulation of {111}-oriented SiC film with chemical vapor deposition

Machine learning driven simulated deposition of carbon films: from low-density to diamondlike amorphous carbon

Improving the Mechanical Property of Amorphous Carbon Films by Silicon Doping