Abstract:Molecular dynamics simulations were conducted to investigate the high-speed grinding process of monocrystalline silicon with a single diamond abrasive grain.By analyzing the morphological characteristics of chips,phase transformation and dislocation movement in subsurface,the influence of ginding speed on subsurface damage and integrity of ground surface were investigated combining the evolution of superficial area in workpiece.The simulation results show that the bump of material in the front of the abrasive grain increased at a higher grinding speed.When the grinding speed was more than 200 m/s,the increment of volume of the chip was not obvious.However,the average temperatures at the contact area increased substantially due to the squeezing and friction generated between the grain and workpiece.The interactions among the grinding temperature,grinding force and adhesion effect gave diversity for friction coefficient in a rule of "high to small".As a result of the lattice deformation,lattice reconstruction and amorphous phase transformation,the grinding force presented a critical fluctuation in the chip formation.For machining the silicon,a kind of brittle material,the damage layer in subsurface experienced a change of "thin to thick" with the grinding speed going up.When the grinding speed increased,the atom lattices beneath the grain had no enough time for the rearrangement,which resulted in less amorphous structure as well as a consequence of a thinner damage depth.While the grinding speed was over than 150 m/s,the dominant factor was the high temperature in the machining area,a thicker damage layer was induced on account of the dislocation nucleation and motion.

Surface Damages on Silicon Surfaces Created by Large Silica Cluster Impacts: Molecular Dynamics Simulation

Extrusion Formation Mechanism On Silicon Surface Under The Silica Cluster Impact Studied By Molecular Dynamics Simulation

Comparison of surface damage under the dry and wet impact: Molecular dynamics simulation

Energy transfer under impact load studied by molecular dynamics simulation

Effect of crystallographic orientation on the extrusion of silicon surface during an impact: Molecular dynamics simulation

Phase Transformation During Silica Cluster Impact on Crystal Silicon Substrate Studied by Molecular Dynamics Simulation

Molecular Dynamics Simulation Analysis of Energy Deposition on the Evolution of Single Crystal Silicon Defect System

Molecular Dynamics Simulation on Subsurface Damage Layer During Nano Grinding Process of Silicon Wafer

Large-scale Molecular Dynamics Simulation for Two Ar Clusters Impact on 4H–sic

Molecular dynamics study of damage nearby silicon surface bombarded by energetic carbon ions

Molecular Dynamics of Nanometric Processing of Ion Implanted Monocrystalline Silicon Surfaces

Numerical Investigation on Subsurface Damage in Nanometric Cutting of Single-Crystal Silicon at Elevated Temperatures

Effects of grinding speeds on the subsurface damage of single crystal silicon based on molecular dynamics simulations

An Investigation on the Monocrystalline Silicon Surface Damage Caused by Slurry Erosion

Molecular dynamics simulation of subsurface damage mechanism during nanoscratching of single crystal silicon

Subsurface Damage Mechanism of High Speed Grinding Process in Single Crystal Silicon Revealed by Atomistic Simulations

Atomic scale deformation in the solid surface induced by nanoparticle impacts

Effects of Incident Energy and Angle on Carbon Cluster Ions Implantation on Silicon Substrate: a Molecular Dynamics Study

Subsurface Damage in High-speed Grinding Process of Monocrystalline Silicon Based on Molecular Dynamics

Mechanism Study on Size Effects of Cluster Implantation on Silicon

Molecular Dynamics Analyze on Effects of Abrasive Size and Cut Depth on the Monocrystal Silicon Grinding