Abstract:The demand for polished silicon wafers has increased significantly in recent years to cater to the development of the semiconductor industry. For example, polished silicon wafer has direct applications in integrated circuits, radio frequency amplifiers, micro-processors, micro-electromechanical systems, etc. To carry out mechanical polishing, lapping, grinding, or single-point diamond turning of silicon, diamond abrasives were extensively used before the implementation of chemo-mechanical polishing. During the diamond-based polishing, a few problems have already been identified, such as the formation of an amorphous phase, heat-affected zones, low material removal, etc. Some research work has also reported that nano-structured abrasives lead to a thin layer of the amorphous phase and a better material removal rate. In the same direction, a molecular dynamics simulation is carried out in this paper to investigate the mechanism of material removal from monocrystalline silicon during the diamond-abrasive-based polishing process. The present work is mainly focused on the dynamics of material removal phenomena near the abrasive particles at the nanometric scale by considering stress, lattice, cohesive energy, etc. This reveals that a higher value of indentation force results in surface buckling, which creates a zone of both compressive and tensile stresses, which increases the coordination number and forms β-silicon just ahead of the abrasive particle. This mechanism happens by developing a β-silicon phase on the surface with a thickness beyond a certain value of indentation force on the zone of compression. Buckling on this phase happens due to stress localisation in compression, as the flow stress of this phase is less than that of diamond cubic lattices. To avoid the mechanism of surface buckling and process silicon material on the surface, the indentation force needs to be maintained below a critical value. In the present case, it was found that the indentation force of less than or equal to 190 nN for the abrasive size of φ8 nm does the material removal by surface processing only without surface buckling. It was also found that surface processing helps to reduce the depth of the amorphous layer significantly without compromising the material removal rate or the generation of a wavy surface. Thus, the present mechanism will help in the polishing of silicon with minimum defects and reduce processing time for the final stage of polishing towards manufacturing ultra-smooth and planer surfaces.

Repulsion Mechanism of Nanoparticle Colliding with Monocrystalline Silicon Surface

Atomistic Structural Change of Silicon Surface under A Nanoparticle Collision

Phase Transformations of Monocrystalline Silicon Surface under Nanoparticle Collision

Atomic scale deformation in the solid surface induced by nanoparticle impacts

Influences of the Viscosity of Slurry on Monocrystalline Silicon Surface Damage Caused by Nanoparticle Impact

Molecular dynamics study of damage nearby silicon surface bombarded by energetic carbon ions

Energy transfer under impact load studied by molecular dynamics simulation

An Investigation on the Monocrystalline Silicon Surface Damage Caused by Slurry Erosion

Molecular dynamics study of particle-particle collisions between hydrogen-passivated silicon nanoparticles

Molecular Dynamics Study on the Mechanism of Nanoparticle Phase Change Caused by Collision with Wall Surface

Molecular dynamics simulation of subsurface damage mechanism during nanoscratching of single crystal silicon

Extrusion Formation Mechanism On Silicon Surface Under The Silica Cluster Impact Studied By Molecular Dynamics Simulation

Surface Damages on Silicon Surfaces Created by Large Silica Cluster Impacts: Molecular Dynamics Simulation

Effect of crystallographic orientation on the extrusion of silicon surface during an impact: Molecular dynamics simulation

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Mechanism of surface modification on monocrystalline silicon during diamond polishing at nanometric scale

Comparison of surface damage under the dry and wet impact: Molecular dynamics simulation

Impact Behavior of Intrinsically Brittle Nanoparticles: A Molecular Dynamics Perspective

Variations of a Ni-P Surface Layer after Nanoparticle Impacts

Material removal mechanisms of monocrystalline silicon under the impact of high velocity micro-particles

Interface-mediated thermomechanical effects during high velocity impact between monocrystalline surfaces