Abstract:Defects significantly influence the electrical properties of semiconductors and their interfaces. The migration barriers and electrical properties of silicon monovacancy defect in an amorphous-SiO2/Si (a-SiO2/Si) interface are studied in this work. The minimum energy path and kinetics of monovacancy defect in the a-SiO2/Si interface are calculated by the climbing image nudged elastic band method. It is indicated that the a-SiO2/Si interface may be an effective sink for the monovacancies from the Si sublayers due to the unevenly distributed strain; the vacancy defect migrated into a-SiO2/Si interface can trigger structural changes by local distortion. The partial charge density of a monovacancy in the a-SiO2/Si interface shows that the induced defect level is localized around the unpaired Si dangling bonds and extends along the [110] zigzag chains of Si atoms. In addition, the formation energies of a silicon vacancy defect in the a-SiO2/Si interface are calculated with sophisticated corrections applicable to the interface system by combining the density functional theory calculation and finite element simulation. It is suggested that a Si monovacancy can appear in V0, V−, and V2−, and the (−/2−) and (0/−) transition levels lie at 0.15 and 0.2 eV below the CBMSi, respectively. The vacancies generated by displacement damage result in anisotropic migration and charge build-up in the a-SiO2/Si interface; for further dynamics, the ionization radiation can induce cascade reactions of displacement defects by synergistic effect between ionization and displacement radiation damages, and consequently excess base current and gain degradation in transistors.

Molecular Dynamics Simulations of Vacancy Generation and Migration Near a Monocrystalline Silicon Surface During Energetic Cluster Ion Implantation

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Molecular Dynamics of Nanometric Processing of Ion Implanted Monocrystalline Silicon Surfaces

Effects of Incident Energy and Angle on Carbon Cluster Ions Implantation on Silicon Substrate: a Molecular Dynamics Study

Molecular dynamics simulation of silicon ion implantation into diamond and subsequent annealing

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Mechanism Study on Size Effects of Cluster Implantation on Silicon

Ab Initio Calculation of Silicon Monovacancy Defect in Amorphous-Sio2/si Interface

Nanocrystal structure on monocrystalline silicon induced by energetic cluster

Molecular dynamics study of damage nearby silicon surface bombarded by energetic carbon ions

Molecular dynamics simulation of silicon vacancy defects in silicon carbide by hydrogen ion implantation and subsequent annealing

Implantation Study of Silicon Cluster Ions Si+n(n=1-3)Into Si Crystal

Molecular Dynamics Simulation of Ion-Implanted Single-Crystal 3C-Sic Nano-Indentation

Origin of vacancy and interstitial stabilization at the amorphous-crystalline Si interface

Defects in Ion Implantation and Annealing Studied by Atomistic Model

Nanocrystal formation in Si implanted thin SiO2 layers under the influence of an absorbing interface

Nanostructure evolution and surface modification mechanism of Cr ion-implanted single-crystal iron: insights from molecular dynamics simulations

Nanoindentation Study of Silicon-implanted Monocrystal Cubic Silicon Carbide

Molecular Dynamics Study on Size Dependence of Cluster Implantation with Consideration of Varied Low Incident Energies

Molecular Dynamic Simulation on Boron Cluster Implantation for Shallow Junction Formation

Molecular dynamics simulation of W Silicon Emitting Centers formation by Ga ion implantation