Abstract:Revealing the regularities of interaction of accelerated ions with an irradiated material based on the Monte Carlo simulation contributes to the efficient application of focused ion beam technique in modern nanotechnologies. The correctness of the calculation results depends on the model chosen and the parameters determining the surface binding energy (SBE) of sputtered atoms. In this work, the SBE has been determined within the discrete–continuous model, which makes it possible to consider the formation of gallium precipitates during irradiation of a silicon substrate with gallium ions. To compare the simulation results with the experimental data on material sputtering by a focused ion beam, two types of rectangular boxes have been prepared. The structures of the first type were formed at the same dose, close to 5 × 10 17 cm –2 (corresponding to the steady-state sputtering regime), at accelerating voltages of 8, 16, and 30 kV. The structures of the second type were formed at an ion energy of 30 keV and doses of 2.5 × 10 16 , 5 × 10 16 , and 1 × 10 17 cm –2 . The box cross sections were investigated by transmission electron microscopy. The sputtering yield and depth distribution profiles of gallium atoms, calculated in the SDTrimSP 5.07 software package, were compared with the experimental data using the R factor. Two sets of values have been established for the variable parameters: the SBE of gallium atoms and the α 1 parameter of the discrete–continuous model. The first set describes the experimental data with acceptable accuracy for a small number of implanted gallium atoms, which is implemented for low ion doses, as well as for a beam energy of 8 keV and a dose of 5 × 10 17 cm –2 . The second set is optimal for describing the ion beam interaction with the substrate at ion energies of 16 and 30 keV under steady sputtering conditions.

Simulation on Ion Implantation into SiGe Substrate

Simulation On Low Energy Ion Implantation Into Ge And Sige With Molecular Dynamics Method

Ion implantation into Si covered by HfO2 or SiO2 film

Study of Si and Ge growth on Si(100) surface

Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate

Molecular Dynamics Simulations of Vacancy Generation and Migration Near a Monocrystalline Silicon Surface During Energetic Cluster Ion Implantation

Molecular-dynamics simulation of Si1-xGex epitaxial growth on Si(1 0 0)

Monte Carlo Modeling of Ge Surface Segreation in Si1-xGex Thin Films

Computer Simulation for the Formation of the Insulator Layer of Silicon-On-Insulator Devices by N+ and O+ Co-Implantation

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Measurement and Simulation of Ultra-Low-Energy Ion-Solid Interaction Dynamics

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Research on dopant distribution of multi-energy boron implantations into c-SiC

Computer Simulation On Low Energy Ion Implantation Based On Molecular Dynamics Methods

Simulation of Material Sputtering and Gallium Implantation during Focused Ion Beam Irradiation of a Silicon Substrate

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

Molecular Dynamics Simulation of Ion Implantation into HfO 2 and HfO 2 /si Multi-Layer Structure

Molecular-dynamics simulation of Si1−xGex epitaxial growth on Si(100)

Computer-Simulations Of The Ion-Implantation Process In Layered Materials

Molecular dynamics simulation of W Silicon Emitting Centers formation by Ga ion implantation

Molecular dynamics simulation of silicon ion implantation into diamond and subsequent annealing