Computer Simulation On Low Energy Ion Implantation Based On Molecular Dynamics Methods

Yajun Ran,Wenyu Gao,Ru Huang,Min Yu,Xing Zhang,Yangyuan Wang
IF: 1.019
2000-01-01
Chinese Journal of Electronics
Abstract:We have developed a reliable and efficient molecular dynamics program LEACS to simulate the low energy ion implantation, In our code, the newest physical models are included and a great number of efficient algorithms are used to conduct realistic and accurate simulations. By comparing our simulation results with the SIMS data for B, As and P ranging from 10 keV to 70 keV implantation, we verified the correctness and efficiency of our code.
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