Abstract:Advances in Solid State Circuits Technologies 194 the atomic level, and it consumes too much time, therefore, in most cases, it is not suitable for ESD simulation.Analytic implantation models are analyzed by series of distribution functions, including Gauss distribution function, Pearson distribution function, Pearson-IV distribution function (P4), Pearson-IV distribution with linear exponential tail function ( P 4 S ) , P e a r s o n -I V d i s t r i b u t i o n w i t h g e n e ral exponential tail function (P4K), Gauss distribution with general exponential tail function (GK), Jointed half-Gauss distribution function (JHG), Jointed half-Gauss distribution with general exponential tail function (JHGK).The eight distribution functions are called single primary distribution functions.The complicated expressions of the functions will not be discussed here, and all of them can be found in the DIOS USER'S MANUAL.The single primary distribution functions describe the relationship between impurity distribution and seven key parameters, which are determined by implantation process step.The seven key parameters are RP (Rp), STDV ( p), STDVSec ( p2), GAMma ( ), BETA ( ), LEXP (lexp), LEXPOW ( ).The range of parameters that must be specified for each of the single primary distribution functions are shown in Table1.In Table1, x means the parameter must be a real number, x0 means the parameter must be nonnegative, > 0 means the parameter must be positive, and ∅ means the parameter is not allowed for the particular function.Once the implanted element, energy, dose, tilt and rotation of an implantation process step are defined by users, the relevant parameter set will be looked up in implant tables.With proper parameter set, the impurity distribution will be calculated subsequently.If users have data fitted to experiments, the parameter set can be defined in implantation command. How to referenceIn order to correctly reference this scholarly work, feel

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Reace: A New Algorithm For Low Energy Ion Implantation Simulation.