Abstract:>According to thermodynamic and kinetic theory,considering the variation of bulk free energy and superficial energy after nucleation as well as the migration of atoms,we study systematically the planar nucleation and crystallization that relate to two possible transition mechanisms in the annealing process of ion implanted S i:(1) liquid/solid transition:the critical nucleation work is equal to half the increased superficial energy and inversely proportional to the supercoolingΔT.Compared with bulk nucleation,the radius of the critical nucleus decreases by half,and the nucleation rate attains its maximum at T = Tm/2.(2) amorphous/crystalline transition:the atoms contained in the critical nucleus and situated on its surface,as well as critical nucleation work,are all directly proportional to the height of the nucleus,and the nucleation barrier is equal to half the superficial energy too.In addition,we take SiGe semiconductor as a specific example for calculation;a value of 0.03 eV/atom is obtained for the elastic strain energy,and a more reasonable result can be gotten after taking into account its effect on transition Finally,we reach the following conclusion as a result of the calculation:for the annealing of ion implanted Si,no matter what the transition method is—liquid or solid planar nucleation—the recrystallization process is actually carried out layer by layer on the crystal substrate,and the probability of forming a"rod-like"nucleus is much larger than that of a"plate-like"nucleus.

Defects in Ion Implantation and Annealing Studied by Atomistic Model

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Studying shallow junction technology by atomistic modeling

Atomistic simulation of defects evolution in silicon during annealing after low energy self-ion implantation

Efficient atomistic method simuation on low energy doping and high temperature annealing technology

Simulation on Advanced Shallow Junction Technology with Atomistic Method

Atomistic simulation for shallow junction formation

Roughness of amorphous/crystalline interface in pre-amorphization implantation: Molecular dynamic simulation and modeling

Atomistic Annealing Simulation: Kinetic Lattice Monte Carlo

Molecular Dynamics of Nanometric Processing of Ion Implanted Monocrystalline Silicon Surfaces

Atomistic Simulation of RTA Annealing for Shallow Junction Formation Characterizing Both BED and TED

Atomistic Simulation of Nanoindentation on Incipient Plasticity and Dislocation Evolution in Γ/γ′ Phase with Interface and Void

Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation

Atomistic Simulation Analysis of the Effects of Void Interaction on Void Growth and Coalescence in a Metallic System

Molecular dynamics simulation of silicon vacancy defects in silicon carbide by hydrogen ion implantation and subsequent annealing

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Nanostructure evolution and surface modification mechanism of Cr ion-implanted single-crystal iron: insights from molecular dynamics simulations

Planar Nucleation and Crystallization in the Annealing Process of Ion Implanted Silicon

The Planck Telescope

The Role of Surface Annihilation in Annealing Investigated by Atomic Model Simulation

Simulating Enhanced Diffusion and Activation of Boron by Atomistic Model