Assessing trajectory-dependent electronic energy loss of keV ions by a binary collision approximation code

R. Holeňák,E. Ntemou,S. Lohmann,M. Linnarsson,D. Primetzhofer,and D. Primetzhofer
DOI: https://doi.org/10.1103/physrevapplied.21.024048
IF: 4.6
2024-02-27
Physical Review Applied
Abstract:The inelastic energy deposition of energetic ions is a decisive quantity for numerous industrial-scale applications, such as sputtering and ion implantation, yet the underlying physics being governed by dynamic many-particle processes is commonly only qualitatively understood. Recently, transmission experiments on single-crystalline targets (Phys. Rev. Lett. 124, 096601 & Phys. Rev. A 102, 062803) revealed a complex energy scaling of the inelastic energy loss of low-energy ions heavier than protons along different trajectories. We use a Monte Carlo like binary collision approximation code equipped with an impact-parameter-dependent modeling of the inelastic energy losses to assess the role of local contributions to electronic excitations in these cases. We compare angular intensity distributions of calculated trajectories with experimental results for 50-keV 4He and 100-keV 29Si ions transmitted in a time-of-flight setup through single-crystalline silicon (001) foils with nominal thicknesses of 200 and 50 nm, respectively. In these calculations, we employ different models of electronic energy loss, i.e., local and nonlocal forms for light and heavy projectiles. We find that the vast number of projectiles are eventually channeled along their trajectories, regardless of the alignment of the crystal with respect to the incident beam. It is, however, only when local electronic energy loss is considered that the simulated two-dimensional maps and energy distributions show excellent agreement with the experimental results, where channeling leads to significantly reduced stopping, especially for heavier projectiles. We demonstrate the relevance of these effects for ion implantations by assessing the nonlinear and nonmonotonic scaling of the ion range with the thickness of a random surface layer. https://doi.org/10.1103/PhysRevApplied.21.024048 Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. Funded by Bibsam. Published by the American Physical Society
physics, applied
What problem does this paper attempt to address?
The problem that this paper attempts to solve is about the influence of different trajectories on electron energy loss during the transmission of low - energy ions in crystals. Specifically, the researchers are concerned with how to evaluate the trajectory - dependent electron energy loss of light and heavy ions during their transmission in single - crystal silicon through the Binary Collision Approximation (BCA) code. This problem is crucial for understanding the dynamic multi - particle processes in industrial applications such as ion implantation and sputtering, because these processes are usually only qualitatively understood and lack accurate quantitative descriptions. The paper mentions that recent experiments have revealed complex energy - scaling relationships in the inelastic energy loss of low - energy heavy ions (heavier than protons) when they are transmitted along different trajectories. To explore this phenomenon, the researchers used a Monte - Carlo - like BCA code combined with a collision - parameter - based inelastic energy loss model to evaluate the influence of local contributions on electron excitation. By comparing the angular intensity distributions of the calculated trajectories with the experimental results, the researchers found that when the local electron energy loss is considered, the simulated two - dimensional maps and energy distributions show excellent agreement with the experimental results, especially in the case of heavier ions, where the channeling effect leads to a significant reduction in energy loss. In addition, the study also explored the relevance of these effects in ion implantation. By evaluating the non - linear and non - monotonic scaling relationships of the random surface layer thickness to the ion range, it further verified the necessity of locally treating the energy loss process. In summary, this study aims to provide an in - depth understanding of the energy loss mechanisms of low - energy ions during their transmission in crystals through accurate modeling and experimental comparison.