Abstract:As the device size continues to shrink, the gate oxygen layer in MOS devices continues to become thinner, which leads to problems such as increased leakage current in conventional Si MOS devices. SiC, an important semiconductor material used in high-power devices, is not immune to the problem of premature breakdown due to the gate oxygen layer. Based on this, this paper adopts the innovative approach of replacing the conventional SiO 2 as the gate oxygen layer with the high-k material, hafnium dioxide (HfO 2 ), and continues the in-depth study on the electrical characteristics of the gate oxygen structure. In this paper, hafnium dioxide (HfO 2 ) thin films were deposited on SiC and Si substrates using the atomic layer deposition(ALD) method. The metal-insulated semiconductor (MIS) structures with Al as the upper and lower electrodes were prepared, and the leakage currents and breakdown voltage characteristics of the MOS capacitors on the two different substrates were investigated. The leakage current density of the MOS capacitor structure with SiC substrate is 10 -11 A/cm 2 ,and the breakdown voltage is about 32 V. Based on the capacitance-voltage (C-V) measurements, the frequency dependence of the movable charge at the interface of the MOS capacitor structure is investigated. The lowest interfacial defect density (D it ) of the MOS capacitive structure with SiC substrate is only of the order of 10 10 eV -1 cm -2 , while the movable charge N eff of the oxide layer of this sample is also controlled to the order of 10 13 cm -2 . It is worth mentioning that the HfO 2 /SiC structure performs better than the HfO 2 /Si structure in these electrical parameters, and the sample designed in this paper also performs better in electrical parameters than previous studies. These results undoubtedly demonstrate that the combination of High-k material (HfO 2 ) and SiC in the MOS gate oxygen layer is a promising research topic.

Ion implantation into Si covered by HfO2 or SiO2 film

Molecular Dynamics Simulation of Ion Implantation into HfO 2 and HfO 2 /si Multi-Layer Structure

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Modulation of the structural and optical properties of sputtering-derived HfO2 films by deposition power

Molecular Dynamics Simulation of Ion Implantation into Hafnium Dioxide

Mev-Si Ion Irradiation Effects on the Electrical Properties of Hfo2 Thin Films on Si

Effect of Er Ion Implantation on the Physical and Electrical Properties of TiN/HfO 2 Gate Stacks on Si Substrate

Atomic Simulation of Ion Implantation into HfO/sub 2/: LEACS Vs. TSUPREM4

Atomistic Analysis on Implantation Effects of Hydrogen Ions and Copper Ions into 4H-Sic

Measurement and Simulation of Ultra-Low-Energy Ion-Solid Interaction Dynamics

Simulation on Ion Implantation into SiGe Substrate

Simulation of Implantation into HfO/sub 2/ by MD Method

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

Electrical Characterization of HfO2/4H-SiC and HfO2/Si MOS Structures

Irradiation effect of HfO2 MOS structure under gamma-ray

The Interfacial Quality of HfO[sub 2] on Silicon with Different Thicknesses of the Chemical Oxide Interfacial Layer

Effect of Oxygen Vacancy on the Electronic Structure and Electrical Properties of HfO2/Si Interface

Structural and electrical characterization of Al2O3/HfO2/Al2O3 on strained SiGe

An Investigation into the $HfO_2/Si$ Interface: Materials Science Challenges and their Effects on MOSFET Device Performance

Modification Mechanism of Collaborative Ions Implanted into 4H-Sic by Atomic Simulation and Experiment

Electron trapping in HfO 2 layer deposited over a HF last treated silicon substrate