Abstract:The n-type ultrathin fully depleted silicon-on-insulator (FDSOI) metal–oxide–semiconductor field-effect transistors (MOSFETs), with a Hf0.5Zr0.5O2 high dielectric permittivity (high-k) dielectric as gate insulator, were fabricated. The total ionizing dose effects were investigated, and an X-ray radiation dose up to 1500 krad(Si) was applied for both long- and short-channel devices. The short-channel devices (0.025–0.100 μm) exhibited less irradiation sensitivity compared with the long-channel devices (0.35–16 μm), leading to a 71% reduction in the irradiation-induced drain current growth and a 26% decrease in the shift of the threshold voltage. It was experimentally demonstrated that the OFF mode is the worst case among the three working conditions (OFF, ON and All0) for short-channel devices. Also, the determined effective electron mobility was enhanced by 38% after X-ray irradiation, attributed to the different compensations for charges triggered by radiation between the high-k dielectric and buried oxide. By extracting the carrier mobility, gate length modulation, and source/drain (S/D) parasitic resistance, the degradation mechanism on X-ray irradiation was revealed. Finally, the split capacitance–voltage measurements were used to validate the analysis.

Metastable Electron Traps in Modified Silicon-on-Insulator Wafer

Novel SOI technology - H+ implantation, bonding and separation

The analysis of the anomalous hot-carrier effect in partially depleted SOI pMOSFETs fabricated on modified wafer

Evolution of secondary defects in arsenic implanted Si

Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET

Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology

Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices

Substrate Effect on Radiation-Induced Charge Trapping in Buried Oxide for Partially-Depleted SOI NMOSFET

Ion implantation into Si covered by HfO2 or SiO2 film

Investigation of a radiation-hardened quasi-SOI device: performance degradation induced by single ion irradiation

Implant Damage and Redistribution of Indium in Indium-Implanted Thin Silicon-on-insulator

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs

Fabrication of Silicon-on-insulator-multilayer Structure by Epitaxial Layer Transfer

Soi Structures Produced By Oxygen Ion-Implantation And Their Annealing Behavior

Physical Model for Ionizing Radiation Damage in Partially Depleted SOI Transistors

Total Ionizing Dose (TID) Effect and Single Event Effect (SEE) in Quasi-Soi Nmosfets

X-ray irradiation-induced degradation in Hf0.5Zr0.5O2 fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors

Fabrication of Silicon-on-Insulator Structure with Si3N4 As Buried Insulating Films by Epitaxial Layer Transfer

Hole Capture-Structural Relaxation Mechanism of Defect Generation in Ionizing-irradiated $a$-SiO$_2$

Heavy-ion-induced permanent damage in ultra-deep submicron fully depleted SOI devices