Abstract:Fully depleted (FD) silicon-on-insulator (SOI) nMOSFETs fabricated using 0.2-mu m SOI technology with external body contact (EBC) and floating body (FB) structures are irradiated up to 500 krad(Si) using 60Co gamma rays under the transmission gate (TG) and OFF bias conditions, respectively. The threshold voltage shift of the back transistors due to radiation-induced charge trapping in the buried oxide (BOX) is used to characterize the total dose response of irradiated back transistors. The results indicate that, overall, the TG biased EBC transistors with various gate lengths are more sensitive to the total dose radiation than the OFF biased FB counterparts at low dose levels. Furthermore, for the shorter gate transistors with a supply voltage of 1.8 V, a relatively complex correlation exists between the total dose response and the gate length. In particular, the back transistor of the TG biased 0.20-mu m 1.8-V EBC transistor reveals smaller threshold voltage shifts than the OFF biased counterpart at approximately 500 krad(Si) because of the saturation of its threshold shift with increased doses, and a similar radiation response is observed for the TG biased 0.35-mu m EBC transistor with a supply voltage of 2.5 V. We found that the 2.5-V back transistors exhibited greater radiation hardness than the 1.8-V counterparts with the same bias configuration in most cases.

Substrate Effect on Radiation-Induced Charge Trapping in Buried Oxide for Partially-Depleted SOI NMOSFET

Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology

The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology.

Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS

Bias and Geometry Dependence of Total-Ionizing-dose Effects in SOI FinFETs

Radiation-enhanced Channel Length Modulation Induced by Trapped Charges in Buried Oxide Layer

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

Comparison of the Total Dose Responses of Fully Depleted SOI Nmosfets with Different Geometries for the Worst Case Bias Conditions

Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices

Influence of Characteristics’ Measurement Sequence on Total Ionizing Dose Effect in PDSOI Nmosfet

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

A Special Total-Ionizing-Dose-Induced Short Channel Effect in Thin-Film PDSOI Technology: Phenomena, Analyses, and Models

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

A New Threshold Voltage Shift Model Due to Radiation in Fully-Depleted SOI MOSFET

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Physical Model for Ionizing Radiation Damage in Partially Depleted SOI Transistors

A comprehensive evaluation of radiation hardening by applying negative body bias and back-gate bias in 130 nm PDSOI technology

Simulation of Suppression of Floating-Body Effect in Partially Depleted SOI MOSFET Using a Si1−xGex Dual Source Structure

The analysis of the anomalous hot-carrier effect in partially depleted SOI pMOSFETs fabricated on modified wafer

Radiation of SOI MOSFET with Shallow Source

Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET