Abstract:The static and dynamic characteristics of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) under gate and drain biases exhibit differential degradation after irradiation. Total ionizing dose (TID) irradiation caused threshold voltage shift and switch response degradation, and the degradation trends of these two parameters were not the same dependence on the bias. The threshold voltage of devices under test (DUT) shifted toward negative due to the radiation-induced positive oxide trapped charges. Turn-off time ( ${t} _{\text {off}}$ ) was more sensitive to TID irradiation compared to turn-on time ( ${t} _{\text {on}}$ ). The switch response changed after irradiation due to parasitic capacitance gate-to-drain capacitance (CGD) and threshold voltage degradation. It has been verified by Sentaurus TCAD 2-D simulations that the high-speed accumulation of gate oxide traps in the localized region of the trench gate MOS [U-shaped trench-gate metal–oxide–semiconductors (UMOS)] due to the nonuniform distribution of the electric field is the main reason for the special degradation of electrical parameters under drain bias. For TID radiation damage evaluation and radiation hardening of SiC MOSFETs under different biases, both static and dynamic performances should be considered. The experimental results provide valuable insights into the behavior of SiC MOSFETs under radiation and are crucial for designing reliable electronic systems for space and nuclear applications.

A comprehensive evaluation of radiation hardening by applying negative body bias and back-gate bias in 130 nm PDSOI technology

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

Investigation of Radiation Hardening by Back-Channel Adjustment in PDSOI MOSFETs

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

Impact of Back-gate Bias and Body-tie on the DSOI SRAMs under Total Ionizing Dose Irradiation

Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology

Bias and Geometry Dependence of Total-Ionizing-dose Effects in SOI FinFETs

Comparison of the Total Dose Responses of Fully Depleted SOI Nmosfets with Different Geometries for the Worst Case Bias Conditions

An Effective Method to Compensate Total Ionizing Dose-Induced Degradation on Double-SOI Structure

Enhanced Radiation Hardness in SOI MOSFET with Embedded Tunnel Diode Layer

Hot Carrier Reliability of Radiation Hardened T-gate PD SOI NMOSFET after TID Radiation

Research on the Coupling Effect of NBTI and TID for FDSOI pMOSFETs

Interface Passivation Strategy for Ge Pmosfet from a TID Perspective

Total Ionizing Dose Hardening of Planar SOI MOSFET through An Optimal Design Combining Embedded Void and H-gate Structures

Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method

Substrate Effect on Radiation-Induced Charge Trapping in Buried Oxide for Partially-Depleted SOI NMOSFET

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

TID-Induced OFF-State Leakage Current in Partially Radiation-Hardened SOI LDMOS

Special Degradation Effects of 60co Γ-Rays Irradiation on Electrical Parameters of SiC MOSFETs