Abstract:In this article, a novel S-gate-assisted silicon-on-insulator n-channel metal–oxide–semiconductor field-effect transistor (SGA SOI n-MOSFET) structure is proposed in order to suppress the total ionizing dose (TID) effect. The new structure settles the radiation-induced leakage current by isolating both the source and drain from the shallow trench isolation (STI) oxides and introducing two auxiliary gates. This work simulates the TID irradiation of three SOI n-MOSFET devices by Sentaurus TCAD and verifies the anti-TID irradiation characteristics of the proposed SGA SOI n-MOSFET. After the novel SGA SOI n-MOSFET was irradiated with 500 krad(Si), the OFF-state leakage current is only marginally increased, the ON-state leakage current is almost unchanged, the threshold voltage drift is 9.423%, and the transconductance degradation is only 7.453%. The simulation results demonstrated the proposed SGA SOI n-MOSFET resisted TID radiation doses up to 500 krad(Si). Meanwhile, the SGA SOI n-MOSFET is much more compact and saves tremendous cost compared with the H-gate-assisted (HGA) SOI n-MOSFET during very large scale integration (VLSI) fabrication and mass production. Moreover, the SGA SOI n-MOSFET solves the disadvantages of the ring-gate-assisted (RGA) SOI n-MOSFET complex aspect ratio ${W}/{L}$ design. The SGA SOI n-MOSFET offers a better alternative for nonultrahigh radiation dose environments.

Investigation of Radiation Hardening by Back-Channel Adjustment in PDSOI MOSFETs

Total Ionizing Dose Hardening of Planar SOI MOSFET through An Optimal Design Combining Embedded Void and H-gate Structures

TID-Induced OFF-State Leakage Current in Partially Radiation-Hardened SOI LDMOS

A comprehensive evaluation of radiation hardening by applying negative body bias and back-gate bias in 130 nm PDSOI technology

Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS

Hot Carrier Reliability of Radiation Hardened T-gate PD SOI NMOSFET after TID Radiation

Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET

Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology

An Effective Method to Compensate Total Ionizing Dose-Induced Degradation on Double-SOI Structure

Enhanced Radiation Hardness in SOI MOSFET with Embedded Tunnel Diode Layer

Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology

A Novel S-Gate-Assisted SOI n-MOSFET for Total Ionizing Dose Radiation Reinforcement

New Insight into Total-Ionizing-Dose Effect-Induced Breakdown Voltage Degradation for SOI LDMOS: Irradiation Charge Field Modulation

The Total Dose Radiation Hardened Mosfet With Good High-Temperatue Performance

Total Ionizing Dose Hardness Analysis of Transistors in Radiation-Hardened 0.18μm BCD Technology

A PD-SOI Based DTI-LOCOS Combined Cross Isolation Technique for Minimizing TID Radiation Induced Leakage in High Density Memory

High Performance Split-Gate-Trench MOS Based on Radiation-Hardening Technology and Its Total-Ionizing-Dose Radiation Effects

Research on P-Channel VDMOS Radiation Hardened Technology

Updated Structure of Vertical Double-Diffused MOSFETs for Irradiation Hardening Against Single Events

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

Study of TID Radiation Effects on the Breakdown Voltage of Buried P-Pillar SOI LDMOSFETs