Abstract:In this article, the degradation mechanisms of radiation-hardened vertical double-diffused MOSFETs (VD-MOSFET) experiencing gamma ray irradiation and annealing sequentially experiment device and simultaneously experiment device (Si-ED) are studied and compared. Experiments demonstrate that the Si-ED irradiated with gate bias (+12 V) has a lower oxide-trapped charges increment ( $Delta {N}_{ ext {ot}})$ and higher interface states increment ( $Delta {N}_{ ext {it}})$ , compared to those of sequential experiment device (Se-ED). However, for Si-ED irradiated with drain bias (200 V), it shows lower $Delta {N}_{ ext {ot}}$ and $Delta {N}_{ ext {it}}$ than those of Se-EDs, which is similar to that observed in the case of devices irradiated with three-terminal bias (200-V drain bias, −10-V gate bias, and source grounded). In addition, for all cases, it is seen that the drain-biased devices own a larger $Delta {N}_{ ext {ot}}$ but a smaller $Delta {N}_{ ext {it}}$ , compared to those of gate-biased ones, and the three-terminal-biased devices show the lowest, especially in Si-ED. As a result, the variations of $Delta {N}_{ ext {ot}}$ and $Delta {N}_{ ext {it}}$ could cause different degradations of threshold voltage, breakdown voltage, leakage current, and ON-state resistance of devices, which would inevitably threaten the proper functioning of electrical systems. Moreover, in this article, it is concluded that the existing standard, i.e., accelerated annealing after irradiation, cannot reflect the actual radiation reliability of devices. Other evaluation methods regarding total ionizing dose (TID) need to be further explored comprehensively.

Research on P-Channel VDMOS Radiation Hardened Technology

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

Design and Anti-Radiation Research of P-Channel VDMOS

Optimization Of The Cell Structure For Radiation-Hardened Power Mosfets

Investigation of Radiation Hardening by Back-Channel Adjustment in PDSOI MOSFETs

Overview of radiation hardening techniques for IC design

Impact of Heavy-Ion Irradiation in an 80-V Radiation-Hardened Split-Gate Trench Power UMOSFET

High Performance Split-Gate-Trench MOS Based on Radiation-Hardening Technology and Its Total-Ionizing-Dose Radiation Effects

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

Single Event Effects of Low-Voltage N-type and P-type Trench-gate MOSFET Devices

Total Ionizing Dose Hardening of Planar SOI MOSFET through An Optimal Design Combining Embedded Void and H-gate Structures

Research on single event effects and hardening design of LDMOS transistors

Simulation Study of Single-Event Effects for the 4H-SiC VDMOSFET With Ultralow On-Resistance

Analysis and Hardening of SEGR in Trench VDMOS with Termination Structure

A Source Segmented LDMOS Structure for Improving Single Event Burnout Tolerance Based on High-Voltage BCD Process

Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET

Degradation of VDMOS Under Simultaneous and Sequential Stress of Gamma Ray Irradiation and Annealing Process

A Novel SGT MOSFET Based on Radiation-Hardening Technology and Its Total-Ionizing-Dose Radiation Effects

Analysis and Mitigation of Single-Event Gate Rupture in VDMOS with Termination Structure

Total ionizing dose effects of 60Co-γ ray radiation on SiC MOSFETs with different gate oxide thickness

Radiation-Hard and Repairable Complementary Metal-Oxide-Semiconductor Circuits Integrating N-Type Indium Oxide and P-Type Carbon Nanotube Field-Effect Transistors.