Design and Anti-Radiation Research of P-Channel VDMOS

Zheng Jun,Zhou Weisong,Hu Dongqing,Liu Daoguang,He Shijun,Xu Jun

DOI: https://doi.org/10.3969/j.issn.1003-353x.2011.12.002

2011-01-01

Abstract:With process simulator(Athena)and device simulator(Atlas)in Silvaco and L-Edit layout editor,one type of p-channel VDMOS was designed,whose BVDSS is higher than-90 V,and VGS(th) is-4 V.The test results show that RDS(on) is less than 200 mΩ、gfs is 5 S,IGSS and IDSS are all in level of nA and VSD is about-1 V.Utilizing 2-D device simulation method and related simulation models,the single-event burnout(SEB)and single-event gate rupture(SEGR)effects of the designed p-channel VDMOS were analyzed.Through irradiating the device samples using Co-60 γray source,the irradiation effects on some electrical parameters of the designed p-channel VDMOS with certain dose rate and different dose levels were studied.