Abstract:This paper thoroughly analyses the role of drift in the sensitive region in the single-event effect (SEE), with the aim of enhancing the single-particle radiation resistance of N-type metal-oxide semiconductor field-effect transistors (MOSFETs). It proposes a design for a Si-based device structure that extends the lightly doped source–drain region of the N-channel metal-oxide semiconductor (NMOS), thereby moderating the electric field of the sensitive region. This design leads to a 15.69% decrease in the charge collected at the leaky end of the device under the standard irradiation conditions. On this basis, a device structure is further proposed to form a composite metal-oxide semiconductor (MOS) by connecting a pn junction at the lightly doped source–drain end. By adding two charge paths, the leakage collection charge is further reduced by 13.85% under standard irradiation conditions. Moreover, the deterioration of the drive current in the purely growing lightly doped source–drain region can be further improved. Simulations of single-event effects under different irradiation conditions show that the device has good resistance to single-event irradiation, and the composite MOS structure smoothly converges to a 14.65% reduction in drain collection charge between 0.2 pC/μm and 1 pC/μm Linear Energy Transfer (LET) values. The incidence position at the source-to-channel interface collects the highest charge reduction rate of 28.23%. The collecting charge reduction rate is maximum, at 17.12%, when the incidence is at a 45-degree angle towards the source.

Research on single event effects and hardening design of LDMOS transistors

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

A Source Segmented LDMOS Structure for Improving Single Event Burnout Tolerance Based on High-Voltage BCD Process

Research on Single-Event Burnout Reinforcement Structure of SiC MOSFET

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

Simulation Study of Single-Event Burnout Reliability for 1.7-kV 4H-SiC VDMOSFET

Simulation Study of Single-Event Effects for the 4H-SiC VDMOSFET With Ultralow On-Resistance

Single Event Burnout Hardening of Enhancement Mode HEMTs With Double Field Plates

Single-Event Burnout Hardening Method and Evaluation in SiC Power MOSFET Devices

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

Single Event Effects of Low-Voltage N-type and P-type Trench-gate MOSFET Devices

TCAD Analysis of Single-Event Burnout Hardness for an Improved CoolSiC Trench MOSFET

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

Single-event Burnout Effect on Radiation-hardened High-voltage NMOS

A New Type of Si-Based MOSFET for Radiation Reinforcement

Design and Anti-Radiation Research of P-Channel VDMOS

A Modified LDMOS Device with Improved ESD Protection Performance

Improved LDMOS for ESD Protection of High Voltage BCD Process

Simulation studies of Single Event Effects in Ga$_2$O$_3$ MOSFETs

ESD-capability Study of High-voltage nLDMOSs with out the Drift Region DPW Effect

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses