Abstract:Continuously scaling down ICs result in more stringent electrostatic discharge (ESD) protection design requirements. Compared with other devices, silicon-controlled rectifier (SCR) has become the first choice for its area efficiency and robustness. In order to improve the latch-up issue of SCR, various schemes have been proposed. A simple method is to extend the SCR path length, which will result in the enlarged ON resistance. Segment technology is also used to improve the holding voltage of SCR, but it will shrink the effective emitter area and lead to the serious degradation of ESD robustness. MS-LVTSCR is used to protect CMOS input ports. The circuit operating voltage is 3.3V and the gate oxide DC breakdown voltage is 19V so that considering the safety margin, the ESD window is from 3.63V to 17.1V. This work proposes a novel MOS shunt low-voltage trigger silicon-controlled rectifier (MS-LVTSCR) electrostatic discharge protection device by inserting an embedded PMOS structure. Compared with the conventional LVTSCR, the proposed MS-LVTSCR achieves 53% improvement in the holding voltage and still maintains high ESD robustness with a current level of 31.5 mA/ μ m without more device area consumption. In addition, both the TCAD simulation and theoretical analysis were carried out to explore the principle of current shunt effect to improve holding voltage. The extra shunt paths will weaken the conductance modulation effect of the main drift region in the main SCR path and its holding voltage can be further raised by reducing the proportion of main drift region current in the total current. We also conducted detailed studies on the mechanisms and geometry effects of this newly proposed structure via experimental validations.

A Modified LDMOS Device with Improved ESD Protection Performance

An Area-Efficient LDMOS-SCR ESD Protection Device for the I/O of Power IC Application

RC-Embedded LDMOS-SCR with High Holding Current for High-Voltage I/O ESD Protection

Improved LDMOS for ESD Protection of High Voltage BCD Process

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Robust and area-efficient nLDMOS-SCR with waffle layout structure for high-voltage ESD protection

Effect of poly-silicon gate on ESD protection performance of LDMOS-SCR devices

Study of LDMOS-SCR: A High Voltage ESD Protection Device

Design and Analysis of an Area-Efficient High Holding Voltage ESD Protection Device

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

An Improved Ggnmos Triggered Scr for High Holding Voltage Esd Protection Applications

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Investigation on MOS shunt LVTSCR for ESD application

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

Robustness-Improved ESD Protection Devices with Low Leakage Using Middle Silicon Layer in Double SOI Technology

ESD protection design of DDSCR structure based on the 0.5 BCD process

Gate-Controlled LVTSCR for High-Voltage ESD Protections in Advanced CMOS Processes

High-Holding-Voltage Silicon-Controlled Rectifier for ESD Applications

LDMOS–SCR: a Replacement for LDMOS with High ESD Self-Protection Ability for HV Application