Abstract:The trigger voltage walk-in effect has been investigated by designing two different laterally diffused metal—oxide—semiconductor (LDMOS) transistors with an embedded silicon controlled rectifier (SCR). By inserting a P+ implant region along the outer and the inner boundary of the N+ region at the drain side of a conventional LDMOS transistor, we fabricate the LDMOS-SCR and the SCR-LDMOS devices with a different triggering order in a 0.5 μm bipolar-CMOS-DMOS process, respectively. First, we perform transmission line pulse (TLP) and DC-voltage degradation tests on the LDMOS-SCR. Results show that the trigger voltage walk-in effect can be attributed to the gate oxide trap generation and charge trapping. Then, we perform TLP tests on the SCR-LDMOS. Results indicate that the trigger voltage walk-in effect is remarkably reduced. In the SCR-LDMOS, the embedded SCR is triggered earlier than the LDMOS, and the ESD current is mainly discharged by the parasitic SCR structure. The electric potential between the drain and the gate decreases significantly after snapback, leading to decreased impact ionization rates and thus reduced trap generation and charge trapping. Finally, the above explanation of the different trigger voltage walk-in behavior in LDMOS-SCR and SCR-LDMOS devices is confirmed by TCAD simulation.

Effect of poly-silicon gate on ESD protection performance of LDMOS-SCR devices

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

A Modified LDMOS Device with Improved ESD Protection Performance

Study of Turn-on Characteristics of SCRs for ESD Protection with TDR-O and TDR-S TLPs

A Robust Polysilicon-Assisted SCR in ESD Protection Application

An Area-Efficient LDMOS-SCR ESD Protection Device for the I/O of Power IC Application

Effect of metal routing on the ESD robustness of dual-direction silicon controlled rectifier

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

ESD protection design of DDSCR structure based on the 0.5 BCD process

Key factors affecting trigger voltage of SCRS for ESD protection

Comparison of different MOS-triggered SCR structures for on-chip ESD protection

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

Effects of Finger Width and Metal Routing of GGNMOS on ESD Protection

A novel straight through-MOS-triggered SCR for on-chip ESD protection

Vertical Silicon-Controlled Rectifier for ESD Protection under 28nm Ps Process

RC-Embedded LDMOS-SCR with High Holding Current for High-Voltage I/O ESD Protection

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

ESD Protection of NMOS Device at Different Gate Bias

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process