Abstract:Continuously scaling down ICs result in more stringent electrostatic discharge (ESD) protection design requirements. Compared with other devices, silicon-controlled rectifier (SCR) has become the first choice for its area efficiency and robustness. In order to improve the latch-up issue of SCR, various schemes have been proposed. A simple method is to extend the SCR path length, which will result in the enlarged ON resistance. Segment technology is also used to improve the holding voltage of SCR, but it will shrink the effective emitter area and lead to the serious degradation of ESD robustness. MS-LVTSCR is used to protect CMOS input ports. The circuit operating voltage is 3.3V and the gate oxide DC breakdown voltage is 19V so that considering the safety margin, the ESD window is from 3.63V to 17.1V. This work proposes a novel MOS shunt low-voltage trigger silicon-controlled rectifier (MS-LVTSCR) electrostatic discharge protection device by inserting an embedded PMOS structure. Compared with the conventional LVTSCR, the proposed MS-LVTSCR achieves 53% improvement in the holding voltage and still maintains high ESD robustness with a current level of 31.5 mA/ μ m without more device area consumption. In addition, both the TCAD simulation and theoretical analysis were carried out to explore the principle of current shunt effect to improve holding voltage. The extra shunt paths will weaken the conductance modulation effect of the main drift region in the main SCR path and its holding voltage can be further raised by reducing the proportion of main drift region current in the total current. We also conducted detailed studies on the mechanisms and geometry effects of this newly proposed structure via experimental validations.

Key factors affecting trigger voltage of SCRS for ESD protection

Inverstigation of high turn-on speed MOS-Triggered SCR in 0.13μm CMOS process

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Trigger voltage walk-in effect of ESD protection device in HVCMOS

Vertical Silicon-Controlled Rectifier for ESD Protection under 28nm Ps Process

Minimizing Multiple Triggering Effect in Diode-Triggered Silicon-Controlled Rectifiers for ESD Protection Applications

An Investigation on Capacitance-Trigger ESD Protection Devices for High Voltage Integrated Circuits

A novel straight through-MOS-triggered SCR for on-chip ESD protection

Study of Turn-on Characteristics of SCRs for ESD Protection with TDR-O and TDR-S TLPs

Investigation of Boundary-Mos-triggered SCR Structures for On-Chip ESD Protection

Low-leakage Diode-Triggered Silicon Controlled Rectifier for Electrostatic Discharge Protection in 0.18-Μm CMOS Process

Effect of poly-silicon gate on ESD protection performance of LDMOS-SCR devices

A Novel Capacitance-Coupling-Triggered SCR for Low-Voltage ESD Protection Applications

Stacked Zener Trigger SCR for HV IC ESD Protection

High-Holding-Voltage Silicon-Controlled Rectifier for ESD Applications

Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0. 18μm Mixed Mode RFCMOS Technology

Investigation on MOS shunt LVTSCR for ESD application

Insight into Multiple-Triggering Effect in Dtscrs for Esd Protection

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

28 Nm CMOS Process ESD Protection Based on Diode-Triggered Silicon Controlled Rectifier