Abstract:A direct bidirectional current discharge path between the input/output (I/O) and ground (GND) is essential for the robust protection of charging device models (CDM) in the tightly constrained design parameters of advanced low-voltage (LV) processes. Dual-direction silicon controlled rectifiers (DDSCRs) serve as ESD protection devices with high efficiency unit area discharge, enabling bidirectional electrostatic protection. However, the high trigger voltage of conventional DDSCR makes it unsuitable for ASICs used for the preamplification of biomedical signals, which only operate at low supply voltage. To address this issue, a self-biased triggered DDSCR (STDDSCR) structure is proposed to further reduce the trigger voltage. When the ESD pulse comes, the external RC trigger circuit controls the PMOS turn-on by self-bias, and the current release path is opened in advance to reduce the trigger voltage. As the ESD pulse voltage increases, the SCR loop opens to establish positive feedback and drain the amplified current. Additionally, the junction capacitance is decreased through high-resistance epitaxy and low-concentration P-well injection to further lower the trigger voltage. The simulation results of LTspice and TCAD respectively demonstrate that ESD devices can clamp transient high voltages earlier, with low parasitic capacitance and leakage current suitable for ESD protection of high-speed ports up to 1.5V under normal operating conditions.

An Investigation on Capacitance-Trigger ESD Protection Devices for High Voltage Integrated Circuits

Novel Capacitance Coupling Complementary Dual-Direction SCR for High-Voltage ESD

A Novel Capacitance-Coupling-Triggered SCR for Low-Voltage ESD Protection Applications

A capacitance coupling complementation SCR for on-chip electrostatic discharge protection

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Inverstigation of high turn-on speed MOS-Triggered SCR in 0.13μm CMOS process

A novel straight through-MOS-triggered SCR for on-chip ESD protection

Improved Low-Voltage-Triggered Scr Structure for Rf-Esd Protection

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

An Improved Ggnmos Triggered Scr for High Holding Voltage Esd Protection Applications

Investigation of Boundary-Mos-triggered SCR Structures for On-Chip ESD Protection

Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0. 18μm Mixed Mode RFCMOS Technology

A Self-Biased Triggered Dual-Direction Silicon-Controlled Rectifier Device for Low Supply Voltage Application-Specific Integrated Circuit Electrostatic Discharge Protection

Trigger voltage walk-in effect of ESD protection device in HVCMOS

Key factors affecting trigger voltage of SCRS for ESD protection

RC-Embedded LDMOS-SCR with High Holding Current for High-Voltage I/O ESD Protection

Low-leakage Diode-Triggered Silicon Controlled Rectifier for Electrostatic Discharge Protection in 0.18-Μm CMOS Process

Minimizing Multiple Triggering Effect in Diode-Triggered Silicon-Controlled Rectifiers for ESD Protection Applications

Design of Compact-Diode-scr with Low-Trigger Voltage for Full-Chip ESD Protection

Comparison of different MOS-triggered SCR structures for on-chip ESD protection