Abstract:Direct bidirectional current discharge paths between input/output (I/O) and ground (GND) are imperative to achieve robust charged device model (CDM) protection for very stringent design window in advanced low-voltage (LV) processes. In this brief, a compact and fast response dual-directional silicon-controlled rectifier (CFR-DDSCR) has been proposed. Using P-electrostatic discharge (ESD) implantation layer to implement each diode-triggered silicon-controlled rectifier (SCR) within only one n-well, the inherent defect of the prior art (i.e., the cumbersome p-well/n-well triggering diode) is eliminated, ensuring the low resistance of auxiliary triggering path and the compactness of silicon footprint. Moreover, by shielding all internal shallow trench isolation (STIs) with floating high-k metal gates (HKMGs), an all-gate-bounded SCR structure is realized, and all triggering diodes evolve into gated diodes with compact current paths, thus improving the CDM protection capability greatly. Experimental results indicate that the CFR-DDSCR, with a design window suitable for 1.2 V-CMOS technologies, acquires a higher effective CDM robustness (73% improved), a faster turn-on speed (64% improved), and a more compact layout (31% shrunk) compared with its conventional counterpart, which is promising for the advanced LV CDM protection.

A capacitance coupling complementation SCR for on-chip electrostatic discharge protection

Novel Capacitance Coupling Complementary Dual-Direction SCR for High-Voltage ESD

A Novel Capacitance-Coupling-Triggered SCR for Low-Voltage ESD Protection Applications

An Investigation on Capacitance-Trigger ESD Protection Devices for High Voltage Integrated Circuits

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Complementation SCR for RF IC ESD Protection

Complementation SCR for RF IC ESD protection (Electromagnetism)

A novel straight through-MOS-triggered SCR for on-chip ESD protection

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Comparison of different MOS-triggered SCR structures for on-chip ESD protection

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Very Small Snapback Silicon-Controlled Rectifier for Electrostatic Discharge Protection in 28 Nm Processing.

Low-Capacitance SCR Structure for RF I/O Application

ESD protection design of DDSCR structure based on the 0.5 BCD process

Improved Low-Voltage-Triggered Scr Structure for Rf-Esd Protection

Vertical Silicon-Controlled Rectifier for ESD Protection under 28nm Ps Process

A Novel Dual-Directional DTSCR in Twin-Well Process for Ultra-Low-voltage ESD Protection

Investigation of Boundary-Mos-triggered SCR Structures for On-Chip ESD Protection

RC-Embedded LDMOS-SCR with High Holding Current for High-Voltage I/O ESD Protection

Compact and Fast Response Dual-Directional SCR for Nanoscale ESD Protection Engineering

Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0. 18μm Mixed Mode RFCMOS Technology