Abstract:As the characteristic size of semiconductor devices in ICs decreases, ICs are becoming more sensitive to electrostatic discharge (ESD). Electrostatic protection has become one of the most important reliability indexes in ICs, and the ESD protection structure has also become a difficult problem in chip design. A sensor exposed to static electricity can be damaged and its output signal can be disturbed. Therefore, electrostatic protection also plays an important role in sensors. As the scale of ICs increases, the number of chip pins is increasing and a larger area is being used for ESD protection circuits, resulting in higher costs. Silicon controlled rectifier (SCR) ESD protection devices have the highest performance per unit area among the known ESD protection structures, and are thus the first choice for low-cost, on-chip ESD design solutions. In this study, through a Sentaurus simulation, two SCRs with different structures (a directly connected SCR and a modified lateral SCR) are established, and transmission line pulse tests are carried out on the two devices. The key characteristic indexes are analyzed theoretically and by using experimental data. According to the simulation results, the opening voltage of the directly connected SCR is about 1.5 V and its secondary breakdown current is above 5 A, indicating that the device has a high protection level.

Very Small Snapback Silicon-Controlled Rectifier for Electrostatic Discharge Protection in 28 Nm Processing.

Vertical Silicon-Controlled Rectifier for ESD Protection under 28nm Ps Process

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

A Double Snapback SCR ESD Protection Scheme for 28 Nm CMOS Process.

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

A Novel Capacitance-Coupling-Triggered SCR for Low-Voltage ESD Protection Applications

A Compact and Self-Isolated Dual-Directional Silicon Controlled Rectifier (SCR) for ESD Applications

28 Nm CMOS Process ESD Protection Based on Diode-Triggered Silicon Controlled Rectifier

RC-Embedded LDMOS-SCR with High Holding Current for High-Voltage I/O ESD Protection

A Novel Dual-Directional DTSCR in Twin-Well Process for Ultra-Low-voltage ESD Protection

ESD protection design of DDSCR structure based on the 0.5 BCD process

High-Holding-Voltage Silicon-Controlled Rectifier for ESD Applications

Low-leakage Diode-Triggered Silicon Controlled Rectifier for Electrostatic Discharge Protection in 0.18-Μm CMOS Process

A Robust Polysilicon-Assisted SCR in ESD Protection Application

High-performance Electrostatic Discharge Protection Device for Power Chip Based on 28 Nm Process

Novel Capacitance Coupling Complementary Dual-Direction SCR for High-Voltage ESD

Minimizing Multiple Triggering Effect in Diode-Triggered Silicon-Controlled Rectifiers for ESD Protection Applications

Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0. 18μm Mixed Mode RFCMOS Technology

New Electrostatic Discharge Protection Device for VBO High Speed Chip

Design and Analysis of an Area-Efficient High Holding Voltage ESD Protection Device

An Improved Ggnmos Triggered Scr for High Holding Voltage Esd Protection Applications