Abstract:By embedding additional NPN-and PNP-type bipolar junction transistors into a diode-triggered silicon-controlled rectifier (DTSCR) with single-directional ESD protection, we propose and implement a novel dual-directional DTSCR (DDTSCR) by using the twin-well process in a 0.18-mu m CMOS process that provides highly efficient ultra-low-voltage ESD protection. Compared to conventional DTSCRs, the failure current of the pro-posed DDTSCR increases from 4.5 A to 5.6 A, successfully passing the ESD level tests of human body model at 8 kV and machine model at 650 V. Owing to its unique structural design and metal routing, the ESD protection efficiency of the DDTSCR is twice that of the DTSCR. By adopting a new E-shaped layout (DDTSCR-E), the failure current under positive stress can increase further to 6.6 A. In order to verify the ESD protection performance stabilization with different processes, the DDTSCR-E is fabricated in the 0.18-mu m BCD, 0.18-mu m and 21-nm CMOS processes, respectively. The trigger voltage of DDTSCR-E is found more stable than other ESD characteristics during the process migration. The high efficiency, the strong ESD robustness and the stable process migration make the proposed DDTSCR a promising ESD protection device for ultra-low-voltage integrated circuits.

A Double Snapback SCR ESD Protection Scheme for 28 Nm CMOS Process.

Very Small Snapback Silicon-Controlled Rectifier for Electrostatic Discharge Protection in 28 Nm Processing.

Vertical Silicon-Controlled Rectifier for ESD Protection under 28nm Ps Process

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

A Novel Dual-Directional DTSCR in Twin-Well Process for Ultra-Low-voltage ESD Protection

An Improved Ggnmos Triggered Scr for High Holding Voltage Esd Protection Applications

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0. 18μm Mixed Mode RFCMOS Technology

Novel Capacitance Coupling Complementary Dual-Direction SCR for High-Voltage ESD

A Novel DTSCR Structure with High Holding Voltage and Enhanced Current Discharge Capability for 28 nm CMOS Technology ESD Protection

Design and Analysis of an Area-Efficient High Holding Voltage ESD Protection Device

28 Nm CMOS Process ESD Protection Based on Diode-Triggered Silicon Controlled Rectifier

RC-Embedded LDMOS-SCR with High Holding Current for High-Voltage I/O ESD Protection

ESD protection design of DDSCR structure based on the 0.5 BCD process

An Area-Efficient LDMOS-SCR ESD Protection Device for the I/O of Power IC Application

A novel straight through-MOS-triggered SCR for on-chip ESD protection

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

A capacitance coupling complementation SCR for on-chip electrostatic discharge protection

A Novel Capacitance-Coupling-Triggered SCR for Low-Voltage ESD Protection Applications

New Electrostatic Discharge Protection Device for VBO High Speed Chip