Abstract:A direct bidirectional current discharge path between the input/output (I/O) and ground (GND) is essential for the robust protection of charging device models (CDM) in the tightly constrained design parameters of advanced low-voltage (LV) processes. Dual-direction silicon controlled rectifiers (DDSCRs) serve as ESD protection devices with high efficiency unit area discharge, enabling bidirectional electrostatic protection. However, the high trigger voltage of conventional DDSCR makes it unsuitable for ASICs used for the preamplification of biomedical signals, which only operate at low supply voltage. To address this issue, a self-biased triggered DDSCR (STDDSCR) structure is proposed to further reduce the trigger voltage. When the ESD pulse comes, the external RC trigger circuit controls the PMOS turn-on by self-bias, and the current release path is opened in advance to reduce the trigger voltage. As the ESD pulse voltage increases, the SCR loop opens to establish positive feedback and drain the amplified current. Additionally, the junction capacitance is decreased through high-resistance epitaxy and low-concentration P-well injection to further lower the trigger voltage. The simulation results of LTspice and TCAD respectively demonstrate that ESD devices can clamp transient high voltages earlier, with low parasitic capacitance and leakage current suitable for ESD protection of high-speed ports up to 1.5V under normal operating conditions.

Minimizing Multiple Triggering Effect in Diode-Triggered Silicon-Controlled Rectifiers for ESD Protection Applications

Insight into Multiple-Triggering Effect in Dtscrs for Esd Protection

Low-leakage Diode-Triggered Silicon Controlled Rectifier for Electrostatic Discharge Protection in 0.18-Μm CMOS Process

A Novel Technique to Suppress Multiple-Triggering Effect in Typical DTSCRs under ESD Stress

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Improved Turn-on Behavior in a Diode-Triggered Silicon-Controlled Rectifier for High-Speed Electrostatic Discharge Protection.

Novel Diode-Triggered SCR with Suppressed Multiple Triggering for ESD Applications

Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0. 18μm Mixed Mode RFCMOS Technology

Improved Low-Voltage-Triggered Scr Structure for Rf-Esd Protection

High-Holding-Voltage Silicon-Controlled Rectifier for ESD Applications

A Novel Capacitance-Coupling-Triggered SCR for Low-Voltage ESD Protection Applications

A Novel Dual-Directional DTSCR in Twin-Well Process for Ultra-Low-voltage ESD Protection

Key factors affecting trigger voltage of SCRS for ESD protection

Very Small Snapback Silicon-Controlled Rectifier for Electrostatic Discharge Protection in 28 Nm Processing.

28 Nm CMOS Process ESD Protection Based on Diode-Triggered Silicon Controlled Rectifier

A novel straight through-MOS-triggered SCR for on-chip ESD protection

Inverstigation of high turn-on speed MOS-Triggered SCR in 0.13μm CMOS process

Investigation of Boundary-Mos-triggered SCR Structures for On-Chip ESD Protection

A Self-Biased Triggered Dual-Direction Silicon-Controlled Rectifier Device for Low Supply Voltage Application-Specific Integrated Circuit Electrostatic Discharge Protection

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

An Investigation on Capacitance-Trigger ESD Protection Devices for High Voltage Integrated Circuits