Abstract:As process technologies advance into deep sub-micrometer and nanometer scale, the charged device model (CDM) is now considered an important stress model for defining electrostatic discharge (ESD) reliability of integrated circuits. Thus the turn-on time of the ESD elements used in the protection circuit becomes important. At this time, there is no good method to evaluate the CDM ESD device turn-on speed. Equipment like VF-TLP and CC-TLP are too complicated and not precise for this purpose. A new method to evaluate the ESD device turn-on speed is presented in this paper. Based on this novel approach, some CDM ESD devices are analyzed based on the transmission line pulsing (TLP) tester. The designed devices include diodes, grounded-gate NMOS, SCRpsilas (silicon controlled rectifier), and Modified-Lateral SCRpsilas (MLSCR). The rising time of the pulse is set at 200 psec to accurately simulate real CDM pulses. The time-dependent voltage and current data are extracted and calculated from each pulse in the Time Domain Reflection (TDR) TLP tester. Two new ESD turn-on conditions are proposed and defined based on the transient currents in order to compare the relative speed of different ESD devices. The results show that the normalized turn-on time of different devices with various sizes and finger numbers do not correlate well with that obtained under the normal DC conditions, and the same device shows different turn-on characteristics under different pulses. These results enable devices to be designed for improved CDM ESD protection levels, and the present method can be used for ESD design for future nanometer technologies.

Improved Turn-on Behavior in a Diode-Triggered Silicon-Controlled Rectifier for High-Speed Electrostatic Discharge Protection.

Inverstigation of high turn-on speed MOS-Triggered SCR in 0.13μm CMOS process

Minimizing Multiple Triggering Effect in Diode-Triggered Silicon-Controlled Rectifiers for ESD Protection Applications

Study of Turn-on Characteristics of SCRs for ESD Protection with TDR-O and TDR-S TLPs

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Low-leakage Diode-Triggered Silicon Controlled Rectifier for Electrostatic Discharge Protection in 0.18-Μm CMOS Process

A novel straight through-MOS-triggered SCR for on-chip ESD protection

Improved Low-Voltage-Triggered Scr Structure for Rf-Esd Protection

A Novel Capacitance-Coupling-Triggered SCR for Low-Voltage ESD Protection Applications

An Investigation on Capacitance-Trigger ESD Protection Devices for High Voltage Integrated Circuits

Investigation of Turn-on Speeds of Electrostatic Discharge Protection Devices Using Transmission-Line Pulsing Technique

An Improved Ggnmos Triggered Scr for High Holding Voltage Esd Protection Applications

Very Small Snapback Silicon-Controlled Rectifier for Electrostatic Discharge Protection in 28 Nm Processing.

Structure-Dependent Behaviors of Diode-Triggered Silicon Controlled Rectifier under Electrostatic Discharge Stress

A Novel Technique to Suppress Multiple-Triggering Effect in Typical DTSCRs under ESD Stress

A Novel Dual-Directional DTSCR in Twin-Well Process for Ultra-Low-voltage ESD Protection

Vertical Silicon-Controlled Rectifier for ESD Protection under 28nm Ps Process

28 Nm CMOS Process ESD Protection Based on Diode-Triggered Silicon Controlled Rectifier

Insight into Multiple-Triggering Effect in Dtscrs for Esd Protection

A Novel DTSCR Structure with High Holding Voltage and Enhanced Current Discharge Capability for 28 nm CMOS Technology ESD Protection

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process