Abstract:As process technologies advance into deep sub-micrometer and nanometer scale, the charged device model (CDM) is now considered an important stress model for defining electrostatic discharge (ESD) reliability of integrated circuits. Thus the turn-on time of the ESD elements used in the protection circuit becomes important. At this time, there is no good method to evaluate the CDM ESD device turn-on speed. Equipment like VF-TLP and CC-TLP are too complicated and not precise for this purpose. A new method to evaluate the ESD device turn-on speed is presented in this paper. Based on this novel approach, some CDM ESD devices are analyzed based on the transmission line pulsing (TLP) tester. The designed devices include diodes, grounded-gate NMOS, SCRpsilas (silicon controlled rectifier), and Modified-Lateral SCRpsilas (MLSCR). The rising time of the pulse is set at 200 psec to accurately simulate real CDM pulses. The time-dependent voltage and current data are extracted and calculated from each pulse in the Time Domain Reflection (TDR) TLP tester. Two new ESD turn-on conditions are proposed and defined based on the transient currents in order to compare the relative speed of different ESD devices. The results show that the normalized turn-on time of different devices with various sizes and finger numbers do not correlate well with that obtained under the normal DC conditions, and the same device shows different turn-on characteristics under different pulses. These results enable devices to be designed for improved CDM ESD protection levels, and the present method can be used for ESD design for future nanometer technologies.

Investigation of Turn-on Speeds of Electrostatic Discharge Protection Devices Using Transmission-Line Pulsing Technique

Study of Turn-on Characteristics of SCRs for ESD Protection with TDR-O and TDR-S TLPs

Analyse of Protection Devices' Speed Performance against ESD under CDM Using TCAD

Inverstigation of high turn-on speed MOS-Triggered SCR in 0.13μm CMOS process

Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

A Novel and Powerful TCAD Methodology to Evaluate Performance of ESD Protection Devices

Transient Electrothermal Analysis of Multilevel Interconnects in the Presence of ESD Pulses Using the Nonlinear Time-Domain Finite-Element Method

Trigger voltage walk-in effect of ESD protection device in HVCMOS

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

A comparison study of DTSCR by TCAD and VFTLP for CDM ESD protection

A novel straight through-MOS-triggered SCR for on-chip ESD protection

An Investigation on Capacitance-Trigger ESD Protection Devices for High Voltage Integrated Circuits

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Improved Turn-on Behavior in a Diode-Triggered Silicon-Controlled Rectifier for High-Speed Electrostatic Discharge Protection.

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

Comparison of different MOS-triggered SCR structures for on-chip ESD protection

Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0. 18μm Mixed Mode RFCMOS Technology

Investigation of Boundary-Mos-triggered SCR Structures for On-Chip ESD Protection

Robustness Evaluation Of Esd Protection Devices In Nems Using A Novel Tcad Methodology