Abstract:Continuously scaling down and decreasing operation voltages of ICs, from the 5 V TTL-compatible voltage to 3.3 V, then 1.2 V, and now 0.8 V for low-power ICs, results in more stringent electrostatic discharge protection design requirements, such as a narrow ESD design window, low operation voltage, and high ESD robustness. Based on traditional diode string and diode-triggered silicon-controlled rectifiers, an enhanced diode-triggered silicon-controlled rectifier is proposed to meet the requirements of low-voltage integrated circuits as bidirectional electrostatic discharge protection. The new device employs an additional PMOS and NMOS in the N-well and P-well, respectively, to offer additional current paths along the surface to significantly enhance its robustness. TCAD simulation shows that the device is triggered by both the diode strings and embedded MOS, making the device turn on faster and the current distribution more uniform during the ON state owing to the additional surface current paths. The proposed new device has excellent dual-directional ESD protection performance with a figure of merit of 4.01 mA/um2, which is about a 71% improvement compared with the conventional diode-triggered silicon-controlled rectifier. It also has higher area efficiency, lower trigger voltage, lower current leakage, and a faster turn-on speed. The proposed enhanced diode-triggered silicon-controlled rectifier is an attractive ESD protection solution for ultra-low-voltage ICs.

Low-leakage Diode-Triggered Silicon Controlled Rectifier for Electrostatic Discharge Protection in 0.18-Μm CMOS Process

Minimizing Multiple Triggering Effect in Diode-Triggered Silicon-Controlled Rectifiers for ESD Protection Applications

A Novel Capacitance-Coupling-Triggered SCR for Low-Voltage ESD Protection Applications

A Novel Dual-Directional DTSCR in Twin-Well Process for Ultra-Low-voltage ESD Protection

Vertical Silicon-Controlled Rectifier for ESD Protection under 28nm Ps Process

28 Nm CMOS Process ESD Protection Based on Diode-Triggered Silicon Controlled Rectifier

Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0. 18μm Mixed Mode RFCMOS Technology

Improved Turn-on Behavior in a Diode-Triggered Silicon-Controlled Rectifier for High-Speed Electrostatic Discharge Protection.

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Very Small Snapback Silicon-Controlled Rectifier for Electrostatic Discharge Protection in 28 Nm Processing.

Inverstigation of high turn-on speed MOS-Triggered SCR in 0.13μm CMOS process

A novel straight through-MOS-triggered SCR for on-chip ESD protection

A Self-Biased Triggered Dual-Direction Silicon-Controlled Rectifier Device for Low Supply Voltage Application-Specific Integrated Circuit Electrostatic Discharge Protection

A Novel DTSCR With Embedded MOS and Island Diodes for ESD Protection of High-Speed ICs

Structure-Dependent Behaviors of Diode-Triggered Silicon Controlled Rectifier under Electrostatic Discharge Stress

An Investigation on Capacitance-Trigger ESD Protection Devices for High Voltage Integrated Circuits

Improved Low-Voltage-Triggered Scr Structure for Rf-Esd Protection

Key factors affecting trigger voltage of SCRS for ESD protection

High Area Efficiency Bidirectional Silicon-Controlled Rectifier for Low-Voltage Electrostatic Discharge Protection

Novel Ring Silicon-Controlled Rectifier for ESD Protection of Low-Voltage Circuits

Insight into Multiple-Triggering Effect in Dtscrs for Esd Protection