Abstract:Continuously scaling down ICs result in more stringent electrostatic discharge (ESD) protection design requirements. Compared with other devices, silicon-controlled rectifier (SCR) has become the first choice for its area efficiency and robustness. In order to improve the latch-up issue of SCR, various schemes have been proposed. A simple method is to extend the SCR path length, which will result in the enlarged ON resistance. Segment technology is also used to improve the holding voltage of SCR, but it will shrink the effective emitter area and lead to the serious degradation of ESD robustness. MS-LVTSCR is used to protect CMOS input ports. The circuit operating voltage is 3.3V and the gate oxide DC breakdown voltage is 19V so that considering the safety margin, the ESD window is from 3.63V to 17.1V. This work proposes a novel MOS shunt low-voltage trigger silicon-controlled rectifier (MS-LVTSCR) electrostatic discharge protection device by inserting an embedded PMOS structure. Compared with the conventional LVTSCR, the proposed MS-LVTSCR achieves 53% improvement in the holding voltage and still maintains high ESD robustness with a current level of 31.5 mA/ μ m without more device area consumption. In addition, both the TCAD simulation and theoretical analysis were carried out to explore the principle of current shunt effect to improve holding voltage. The extra shunt paths will weaken the conductance modulation effect of the main drift region in the main SCR path and its holding voltage can be further raised by reducing the proportion of main drift region current in the total current. We also conducted detailed studies on the mechanisms and geometry effects of this newly proposed structure via experimental validations.

High-Holding-Voltage Silicon-Controlled Rectifier for ESD Applications

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

RC-Embedded LDMOS-SCR with High Holding Current for High-Voltage I/O ESD Protection

Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection

Vertical Silicon-Controlled Rectifier for ESD Protection under 28nm Ps Process

High Holding Voltage Scr for Robust Electrostatic Discharge Protection

An Improved Ggnmos Triggered Scr for High Holding Voltage Esd Protection Applications

Design of a LVTSCR triggered SCR device for low voltage ESD protection

Investigation on MOS shunt LVTSCR for ESD application

Gate-Controlled LVTSCR for High-Voltage ESD Protections in Advanced CMOS Processes

A Novel SCR for ESD Protection in ICs

Stacked Zener Trigger SCR for HV IC ESD Protection

A Novel Capacitance-Coupling-Triggered SCR for Low-Voltage ESD Protection Applications

Minimizing Multiple Triggering Effect in Diode-Triggered Silicon-Controlled Rectifiers for ESD Protection Applications

Very Small Snapback Silicon-Controlled Rectifier for Electrostatic Discharge Protection in 28 Nm Processing.

An Area-Efficient LDMOS-SCR ESD Protection Device for the I/O of Power IC Application

Novel Silicon-Controlled Rectifier (SCR) for Digital and High-Voltage ESD Power Supply Clamp

Design and Analysis of an Area-Efficient High Holding Voltage ESD Protection Device

Segmented SCR for High Voltage ESD Protection

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

Design of Dual-Directional SCR Structure With High Holding Voltage and Low Dynamic Resistance for High Voltage ESD Protection