Abstract:By embedding additional NPN-and PNP-type bipolar junction transistors into a diode-triggered silicon-controlled rectifier (DTSCR) with single-directional ESD protection, we propose and implement a novel dual-directional DTSCR (DDTSCR) by using the twin-well process in a 0.18-mu m CMOS process that provides highly efficient ultra-low-voltage ESD protection. Compared to conventional DTSCRs, the failure current of the pro-posed DDTSCR increases from 4.5 A to 5.6 A, successfully passing the ESD level tests of human body model at 8 kV and machine model at 650 V. Owing to its unique structural design and metal routing, the ESD protection efficiency of the DDTSCR is twice that of the DTSCR. By adopting a new E-shaped layout (DDTSCR-E), the failure current under positive stress can increase further to 6.6 A. In order to verify the ESD protection performance stabilization with different processes, the DDTSCR-E is fabricated in the 0.18-mu m BCD, 0.18-mu m and 21-nm CMOS processes, respectively. The trigger voltage of DDTSCR-E is found more stable than other ESD characteristics during the process migration. The high efficiency, the strong ESD robustness and the stable process migration make the proposed DDTSCR a promising ESD protection device for ultra-low-voltage integrated circuits.

Effect of metal routing on the ESD robustness of dual-direction silicon controlled rectifier

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Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

Study of Turn-on Characteristics of SCRs for ESD Protection with TDR-O and TDR-S TLPs

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Study of Current Saturation Behaviors in Dual Direction SCR for ESD Applications.

Effects of Finger Width and Metal Routing of GGNMOS on ESD Protection

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

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Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0. 18μm Mixed Mode RFCMOS Technology

Impact of Guard Ring Layout Structure on the Voltage-Tolerance Capacity of ESD Protection Devices

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Robust ESD Protection Device Based on Dual-Direction Silicon Controlled Rectifier

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Investigation Of Waffle Structure Scr For Electro-Static Discharge (Esd) Protection