Abstract:By embedding additional NPN-and PNP-type bipolar junction transistors into a diode-triggered silicon-controlled rectifier (DTSCR) with single-directional ESD protection, we propose and implement a novel dual-directional DTSCR (DDTSCR) by using the twin-well process in a 0.18-mu m CMOS process that provides highly efficient ultra-low-voltage ESD protection. Compared to conventional DTSCRs, the failure current of the pro-posed DDTSCR increases from 4.5 A to 5.6 A, successfully passing the ESD level tests of human body model at 8 kV and machine model at 650 V. Owing to its unique structural design and metal routing, the ESD protection efficiency of the DDTSCR is twice that of the DTSCR. By adopting a new E-shaped layout (DDTSCR-E), the failure current under positive stress can increase further to 6.6 A. In order to verify the ESD protection performance stabilization with different processes, the DDTSCR-E is fabricated in the 0.18-mu m BCD, 0.18-mu m and 21-nm CMOS processes, respectively. The trigger voltage of DDTSCR-E is found more stable than other ESD characteristics during the process migration. The high efficiency, the strong ESD robustness and the stable process migration make the proposed DDTSCR a promising ESD protection device for ultra-low-voltage integrated circuits.

Analysis Of Metal Routing Technique In A Novel Dual Direction Multi-Finger Scr Esd Protection Device

Effect of metal routing on the ESD robustness of dual-direction silicon controlled rectifier

Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0. 18μm Mixed Mode RFCMOS Technology

A Novel Dual-Directional DTSCR in Twin-Well Process for Ultra-Low-voltage ESD Protection

Study of Turn-on Characteristics of SCRs for ESD Protection with TDR-O and TDR-S TLPs

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

Implementation Of Temperature Dependent Contact Resistance Model For The Analysis Of Deep Submicron Devices Under Esd

Investigation Of Waffle Structure Scr For Electro-Static Discharge (Esd) Protection

Effects of Finger Width and Metal Routing of GGNMOS on ESD Protection

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Study of Current Saturation Behaviors in Dual Direction SCR for ESD Applications.

A Robust Polysilicon-Assisted SCR in ESD Protection Application

Analyse of Protection Devices' Speed Performance against ESD under CDM Using TCAD

A Novel Dual Scr Device For Esd Protection

A Novel and Powerful TCAD Methodology to Evaluate Performance of ESD Protection Devices

Impact of Guard Ring Layout Structure on the Voltage-Tolerance Capacity of ESD Protection Devices

An Area-Efficient LDMOS-SCR ESD Protection Device for the I/O of Power IC Application

Vertical Silicon-Controlled Rectifier for ESD Protection under 28nm Ps Process

A novel straight through-MOS-triggered SCR for on-chip ESD protection

Design and Analysis of an Area-Efficient High Holding Voltage ESD Protection Device