Abstract:A novel dual-direction silicon-controlled rectifier (DDSCR) embedded with segmental and cross-bridge topology, which is named DDSCRESCT, is proposed and optimized for electrostatic discharge (ESD) protection. By segmenting <inline-formula> <tex-math notation="LaTeX">$\text{N}^{+}$ </tex-math></inline-formula> bridges and inserting a <inline-formula> <tex-math notation="LaTeX">$\text{P}^{+}$ </tex-math></inline-formula> bridge in DDSCR, the trigger voltage of the DDSCRESCT decreases to 10.3 V, which is attributed to the multiple avalanche breakdown effects. By embedding a floating N-type well in DDSCR, the holding voltage of the DDSCRESCT increases to 7.8 V, due to the low current gain of the parasitic bipolar junction transistors. Compared to DDSCR, the leakage current of the DDSCRESCT decreases about one order of magnitude and achieves a large failure current (<inline-formula> <tex-math notation="LaTeX">${I}_{t{2}}$ </tex-math></inline-formula>) of 3.6 A, resulting from the segmental and cross-bridge topology design. By optimizing the length of the <inline-formula> <tex-math notation="LaTeX">$\text{N}^{+}$ </tex-math></inline-formula> segmental topology and the width of the <inline-formula> <tex-math notation="LaTeX">$\text{P}^{+}$ </tex-math></inline-formula> implanted bridge across the P-type well, the DDSCRESCT exhibits a good clamping ability and a decreased turn-on resistance of <inline-formula> <tex-math notation="LaTeX">$2.1 \Omega $ </tex-math></inline-formula>, resulting in a further <inline-formula> <tex-math notation="LaTeX">$\sim $ </tex-math></inline-formula>16.2% increase of <inline-formula> <tex-math notation="LaTeX">${I}_{t{2}}$ </tex-math></inline-formula>. The human body model (HBM) test of the DDSCRESCT with a finger width of <inline-formula> <tex-math notation="LaTeX">$100 \mu \text{m}$ </tex-math></inline-formula> can reach 4 kV due to the optimized segmental and cross-bridge topology design, which also offers great potential in providing high-voltage ESD protection.

A Novel Dual Scr Device For Esd Protection

A Novel Dual-Directional DTSCR in Twin-Well Process for Ultra-Low-voltage ESD Protection

Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0. 18μm Mixed Mode RFCMOS Technology

Analysis of dummy-gate dual-directional SCR (dSCR) device for ESD protection

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Novel Ring Silicon-Controlled Rectifier for ESD Protection of Low-Voltage Circuits

Novel Capacitance Coupling Complementary Dual-Direction SCR for High-Voltage ESD

A Novel Capacitance-Coupling-Triggered SCR for Low-Voltage ESD Protection Applications

Dual-directional SCR device with dual-gate controlled mechanism for ESD protection in photoelectric chip

Analysis Of Metal Routing Technique In A Novel Dual Direction Multi-Finger Scr Esd Protection Device

A Dual-Polarity ESD Protection Device Based on SCR

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

A Novel SCR for ESD Protection in ICs

Very Small Snapback Silicon-Controlled Rectifier for Electrostatic Discharge Protection in 28 Nm Processing.

A novel Electrostatic Discharge protection design based on SCR

Investigation Of Waffle Structure Scr For Electro-Static Discharge (Esd) Protection

A novel straight through-MOS-triggered SCR for on-chip ESD protection

Vertical Silicon-Controlled Rectifier for ESD Protection under 28nm Ps Process

A capacitance coupling complementation SCR for on-chip electrostatic discharge protection

A Novel DTSCR Structure with High Holding Voltage and Enhanced Current Discharge Capability for 28 nm CMOS Technology ESD Protection

A Novel Dual-Direction SCR Embedded With Segmental and Cross-Bridge Topology for High-Voltage ESD Protection