Abstract:A novel dual-direction silicon-controlled rectifier (DDSCR) embedded with segmental and cross-bridge topology, which is named DDSCRESCT, is proposed and optimized for electrostatic discharge (ESD) protection. By segmenting <inline-formula> <tex-math notation="LaTeX">$\text{N}^{+}$ </tex-math></inline-formula> bridges and inserting a <inline-formula> <tex-math notation="LaTeX">$\text{P}^{+}$ </tex-math></inline-formula> bridge in DDSCR, the trigger voltage of the DDSCRESCT decreases to 10.3 V, which is attributed to the multiple avalanche breakdown effects. By embedding a floating N-type well in DDSCR, the holding voltage of the DDSCRESCT increases to 7.8 V, due to the low current gain of the parasitic bipolar junction transistors. Compared to DDSCR, the leakage current of the DDSCRESCT decreases about one order of magnitude and achieves a large failure current (<inline-formula> <tex-math notation="LaTeX">${I}_{t{2}}$ </tex-math></inline-formula>) of 3.6 A, resulting from the segmental and cross-bridge topology design. By optimizing the length of the <inline-formula> <tex-math notation="LaTeX">$\text{N}^{+}$ </tex-math></inline-formula> segmental topology and the width of the <inline-formula> <tex-math notation="LaTeX">$\text{P}^{+}$ </tex-math></inline-formula> implanted bridge across the P-type well, the DDSCRESCT exhibits a good clamping ability and a decreased turn-on resistance of <inline-formula> <tex-math notation="LaTeX">$2.1 \Omega $ </tex-math></inline-formula>, resulting in a further <inline-formula> <tex-math notation="LaTeX">$\sim $ </tex-math></inline-formula>16.2% increase of <inline-formula> <tex-math notation="LaTeX">${I}_{t{2}}$ </tex-math></inline-formula>. The human body model (HBM) test of the DDSCRESCT with a finger width of <inline-formula> <tex-math notation="LaTeX">$100 \mu \text{m}$ </tex-math></inline-formula> can reach 4 kV due to the optimized segmental and cross-bridge topology design, which also offers great potential in providing high-voltage ESD protection.

A Novel Dual-Direction SCR Embedded With Segmental and Cross-Bridge Topology for High-Voltage ESD Protection

A Novel Dual-Directional DTSCR in Twin-Well Process for Ultra-Low-voltage ESD Protection

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Novel Capacitance Coupling Complementary Dual-Direction SCR for High-Voltage ESD

RC-Embedded LDMOS-SCR with High Holding Current for High-Voltage I/O ESD Protection

Vertical Silicon-Controlled Rectifier for ESD Protection under 28nm Ps Process

Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0. 18μm Mixed Mode RFCMOS Technology

An Area-Efficient LDMOS-SCR ESD Protection Device for the I/O of Power IC Application

Compact and Fast Response Dual-Directional SCR for Nanoscale ESD Protection Engineering

Enhanced asymmetric DDSCR with high robustness for high-voltage ESD protection

Design of Dual-Directional SCR Structure With High Holding Voltage and Low Dynamic Resistance for High Voltage ESD Protection

Novel Symmetrical Dual-Directional SCR with P-Type Guard Ring for High-Voltage ESD Protection

ESD protection design of DDSCR structure based on the 0.5 BCD process

A Compact and Self-Isolated Dual-Directional Silicon Controlled Rectifier (SCR) for ESD Applications

Segmented SCR for High Voltage ESD Protection

A Novel DTSCR Structure with High Holding Voltage and Enhanced Current Discharge Capability for 28 nm CMOS Technology ESD Protection

Low-leakage Diode-Triggered Silicon Controlled Rectifier for Electrostatic Discharge Protection in 0.18-Μm CMOS Process

An Investigation on Capacitance-Trigger ESD Protection Devices for High Voltage Integrated Circuits

A Novel Capacitance-Coupling-Triggered SCR for Low-Voltage ESD Protection Applications

Very Small Snapback Silicon-Controlled Rectifier for Electrostatic Discharge Protection in 28 Nm Processing.

A High Failure-Current Gate-Controlled Dual-Direction SCR for High-Voltage ESD Protection in 0.18-μm BCD Technology