Abstract:The working environment of the industry-level high-voltage communication bus is harsh. Strong electrostatic interference has become one of the key factors affecting the stability of the core module. However, the traditional silicon-controlled rectifier (SCR) is difficult to meet the electrostatic discharge (ESD) design requirements for high-voltage applications. Therefore, this article proposes a novel enhanced gate-controlled dual-direction SCR (EGC-DDSCR) with a high failure current, which can effectively ensure the ESD reliability of the controller area network (CAN) bus. By comparing the ESD performance of EGC-DDSCR, traditional gate-controlled DDSCR (GC-DDSCR), and double-GC-DDSCR (DGC-DDSCR), the physical behavior of the gate control mechanism is explored. Three types of SCR are designed based on a 0.18-$mu ext{m}$ BCD process. According to the physical principles of devices, 2-D electrical simulation and transmission line pulse (TLP) test results predict and verify the ESD parameters of the SCRs. The results show that EGC-DDSCR ($0.64~Omega$ ) has a smaller ON-resistance ($R_{mathrm{scriptscriptstyle ON}}$ ) and higher robustness than GC-DDSCR ($0.98~Omega$ ) and DGC-DDSCR ($0.90~Omega$ ). In addition, the trigger voltage ($V_{t1}$ :42.7 V), holding voltage ($V_{h}$ :31.0 V), and failure current ($I_{t2}$ :16.7 A) of the device fully meet the ESD window of the target chip. EGC-DDSCR can be stably applied to CANL and CANH interfaces for on- chip bidirectional ESD protection.

A High Failure-Current Gate-Controlled Dual-Direction SCR for High-Voltage ESD Protection in 0.18-μm BCD Technology

A Novel Gate-Controlled Dual Direction SCR with Enhanced Failure Current for On-Chip ESD Protection of Industry-Level Controller Area Network Bus

Novel Capacitance Coupling Complementary Dual-Direction SCR for High-Voltage ESD

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Design of Dual-Directional SCR Structure With High Holding Voltage and Low Dynamic Resistance for High Voltage ESD Protection

ESD protection design of DDSCR structure based on the 0.5 BCD process

A Novel Dual-Directional DTSCR in Twin-Well Process for Ultra-Low-voltage ESD Protection

Vertical Silicon-Controlled Rectifier for ESD Protection under 28nm Ps Process

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Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0. 18μm Mixed Mode RFCMOS Technology

Enhanced asymmetric DDSCR with high robustness for high-voltage ESD protection

An Improved Ggnmos Triggered Scr for High Holding Voltage Esd Protection Applications

A Compact and Self-Isolated Dual-Directional Silicon Controlled Rectifier (SCR) for ESD Applications

Design and Analysis of an Area-Efficient High Holding Voltage ESD Protection Device

An Investigation on Capacitance-Trigger ESD Protection Devices for High Voltage Integrated Circuits

Novel Symmetrical Dual-Directional SCR with P-Type Guard Ring for High-Voltage ESD Protection

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Low-leakage Diode-Triggered Silicon Controlled Rectifier for Electrostatic Discharge Protection in 0.18-Μm CMOS Process