A Novel Gate-Controlled Dual Direction SCR with Enhanced Failure Current for On-Chip ESD Protection of Industry-Level Controller Area Network Bus

Yang Wang,Zeyu Zhong,Xiangliang Jin,Yan Peng,Jun Luo,Jun Yang

DOI: https://doi.org/10.1109/jestpe.2022.3151192

IF: 5.462

2022-01-01

IEEE Journal of Emerging and Selected Topics in Power Electronics

Abstract:The working environment of the industry-level high-voltage communication bus is harsh. Strong electrostatic interference has become one of the key factors affecting the stability of the core module. However, the traditional silicon-controlled rectifier (SCR) is difficult to meet the electrostatic discharge (ESD) design requirements for high-voltage applications. Therefore, this article proposes a novel enhanced gate-controlled dual-direction SCR (EGC-DDSCR) with a high failure current, which can effectively ensure the ESD reliability of the controller area network (CAN) bus. By comparing the ESD performance of EGC-DDSCR, traditional gate-controlled DDSCR (GC-DDSCR), and double-GC-DDSCR (DGC-DDSCR), the physical behavior of the gate control mechanism is explored. Three types of SCR are designed based on a 0.18-$mu ext{m}$ BCD process. According to the physical principles of devices, 2-D electrical simulation and transmission line pulse (TLP) test results predict and verify the ESD parameters of the SCRs. The results show that EGC-DDSCR ($0.64~Omega$ ) has a smaller ON-resistance ($R_{mathrm{scriptscriptstyle ON}}$ ) and higher robustness than GC-DDSCR ($0.98~Omega$ ) and DGC-DDSCR ($0.90~Omega$ ). In addition, the trigger voltage ($V_{t1}$ :42.7 V), holding voltage ($V_{h}$ :31.0 V), and failure current ($I_{t2}$ :16.7 A) of the device fully meet the ESD window of the target chip. EGC-DDSCR can be stably applied to CANL and CANH interfaces for on- chip bidirectional ESD protection.

engineering, electrical & electronic