Abstract:A novel dual-direction silicon-controlled rectifier (DDSCR) embedded with segmental and cross-bridge topology, which is named DDSCRESCT, is proposed and optimized for electrostatic discharge (ESD) protection. By segmenting <inline-formula> <tex-math notation="LaTeX">$\text{N}^{+}$ </tex-math></inline-formula> bridges and inserting a <inline-formula> <tex-math notation="LaTeX">$\text{P}^{+}$ </tex-math></inline-formula> bridge in DDSCR, the trigger voltage of the DDSCRESCT decreases to 10.3 V, which is attributed to the multiple avalanche breakdown effects. By embedding a floating N-type well in DDSCR, the holding voltage of the DDSCRESCT increases to 7.8 V, due to the low current gain of the parasitic bipolar junction transistors. Compared to DDSCR, the leakage current of the DDSCRESCT decreases about one order of magnitude and achieves a large failure current (<inline-formula> <tex-math notation="LaTeX">${I}_{t{2}}$ </tex-math></inline-formula>) of 3.6 A, resulting from the segmental and cross-bridge topology design. By optimizing the length of the <inline-formula> <tex-math notation="LaTeX">$\text{N}^{+}$ </tex-math></inline-formula> segmental topology and the width of the <inline-formula> <tex-math notation="LaTeX">$\text{P}^{+}$ </tex-math></inline-formula> implanted bridge across the P-type well, the DDSCRESCT exhibits a good clamping ability and a decreased turn-on resistance of <inline-formula> <tex-math notation="LaTeX">$2.1 \Omega $ </tex-math></inline-formula>, resulting in a further <inline-formula> <tex-math notation="LaTeX">$\sim $ </tex-math></inline-formula>16.2% increase of <inline-formula> <tex-math notation="LaTeX">${I}_{t{2}}$ </tex-math></inline-formula>. The human body model (HBM) test of the DDSCRESCT with a finger width of <inline-formula> <tex-math notation="LaTeX">$100 \mu \text{m}$ </tex-math></inline-formula> can reach 4 kV due to the optimized segmental and cross-bridge topology design, which also offers great potential in providing high-voltage ESD protection.

Study of Current Saturation Behaviors in Dual Direction SCR for ESD Applications.

Study of Turn-on Characteristics of SCRs for ESD Protection with TDR-O and TDR-S TLPs

Current Saturation Analysis of Droop Controlled Voltage Source Converter

Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0. 18μm Mixed Mode RFCMOS Technology

Effect of metal routing on the ESD robustness of dual-direction silicon controlled rectifier

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

A Novel Dual-Directional DTSCR in Twin-Well Process for Ultra-Low-voltage ESD Protection

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

Novel Capacitance Coupling Complementary Dual-Direction SCR for High-Voltage ESD

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

A novel straight through-MOS-triggered SCR for on-chip ESD protection

Low-leakage Diode-Triggered Silicon Controlled Rectifier for Electrostatic Discharge Protection in 0.18-Μm CMOS Process

A High Failure-Current Gate-Controlled Dual-Direction SCR for High-Voltage ESD Protection in 0.18-μm BCD Technology

An Investigation on Capacitance-Trigger ESD Protection Devices for High Voltage Integrated Circuits

ESD protection design of DDSCR structure based on the 0.5 BCD process

Effect of poly-silicon gate on ESD protection performance of LDMOS-SCR devices

A Novel Dual-Direction SCR Embedded With Segmental and Cross-Bridge Topology for High-Voltage ESD Protection

Analyse of Protection Devices' Speed Performance against ESD under CDM Using TCAD

An Area-Efficient LDMOS-SCR ESD Protection Device for the I/O of Power IC Application

Analysis Of Metal Routing Technique In A Novel Dual Direction Multi-Finger Scr Esd Protection Device

Compact and Fast Response Dual-Directional SCR for Nanoscale ESD Protection Engineering