Abstract:In this article, high-voltage (HV) electrostatic discharge (ESD) protection devices with high robustness and strong radiation tolerance are investigated by technology computer-aided design (TCAD) simulations and transmission line pulse (TLP) measurements. The TLP measurement results of laterally diffused MOS (LDMOS)-silicon-controlled rectifier (SCR) fabricated in <inline-formula> <tex-math notation="LaTeX">$0.35 \mu \text{m}$ </tex-math></inline-formula> bipolar-CMOS-DMOS (BCD) process demonstrated that its ESD robustness is elevated by 58% than that of LDMOS and is up to 13 kV human body model protection level. Meanwhile, high holding voltage and current of 17 V and 1.8 A are achieved by low-voltage MOS (LV-MOS) cascade technology in LDMOS-SCR. TLP <inline-formula> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> curves and transient voltage waveforms exhibit high operational stability of LDMOS-SCR. Gamma-ray irradiation experiments show strong radiation tolerance of LDMOS-SCR, whose ESD performance had almost no degradation under total ionizing dose (TID) radiation of 200 krad(Si), while the failure current of LDMOS decreased by 2 A. Therefore, a properly designed LDMOS-SCR is an excellent ESD protection device for HV circuits, especially in space applications.

LDMOS–SCR: a Replacement for LDMOS with High ESD Self-Protection Ability for HV Application

Improved LDMOS for ESD Protection of High Voltage BCD Process

An Area-Efficient LDMOS-SCR ESD Protection Device for the I/O of Power IC Application

Analysis of LDMOS-SCR ESD protection device for 60V SOI BCD technology

Study of LDMOS-SCR: A High Voltage ESD Protection Device

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

RC-Embedded LDMOS-SCR with High Holding Current for High-Voltage I/O ESD Protection

A Modified LDMOS Device with Improved ESD Protection Performance

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Study of Turn-on Characteristics of SCRs for ESD Protection with TDR-O and TDR-S TLPs

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Robust and area-efficient nLDMOS-SCR with waffle layout structure for high-voltage ESD protection

Effect of poly-silicon gate on ESD protection performance of LDMOS-SCR devices

An Improved Ggnmos Triggered Scr for High Holding Voltage Esd Protection Applications

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

A Robust Polysilicon-Assisted SCR in ESD Protection Application

A novel straight through-MOS-triggered SCR for on-chip ESD protection

High-Voltage ESD Protection Devices With High Robustness of 13 kV and Strong Radiation Tolerance up to 200 krad(Si)

A Novel Dual-Directional DTSCR in Twin-Well Process for Ultra-Low-voltage ESD Protection

Novel Capacitance Coupling Complementary Dual-Direction SCR for High-Voltage ESD

Vertical Silicon-Controlled Rectifier for ESD Protection under 28nm Ps Process