Abstract:As electronics become lighter, shorter and more complex, the potential damage to integrated circuits (ICs) from electrostatic discharge (ESD) becomes more severe. In many applications, high voltages will result in high electric fields and high current densities in miniaturized components, which can lead to gate oxide breakdown of circuit components and thermal damage in ICs. Therefore, ESD protection circuits are added inside the electronic product in order to prevent the above damage, but the area of the protection cell should not be too large, otherwise a large proportion of the IC manufacturing cost is spent on the protection circuit. In this paper, we investigate how to improve the ESD protection of the designed high-voltage components through TSMC’s 0. 1S-micron BCD HV process. The sample structures of this work all use high-voltage N-channel laterally diffused MOSFETs (LDMOS), and the I/O protection components can be improved by this protection architecture. First, the ESD robustness of the device is enhanced by embedding a Schottky diode in the bulk end of the nLDMOS. The Schottky diode is parasitized horizontally at the body terminal. Since the parasitic Schottky diode is at the body electrode of the device, the parasitic BJT capability is enhanced, making it easier to trigger the conductivity of the device. Therefore, the new components $\mathrm{V}_{\mathrm{t}i}$ and $\mathrm{V}_{\mathrm{h}}$ values decrease (because the horizontal parasitic Schottky is reversed so the decreasing is obvious), so that the high-voltage ESD protection components have a better performance under ESD events, this design also makes the anti-ESD capacity $\mathrm{I}_{\mathrm{t}2}$ significantly increased. In the case of the body-end horizontal (reversed) embedded Schottky element, the largest $\mathrm{I}_{\mathrm{t}2}$ is found on the $\mathrm{R}\mathrm{e}\mathrm{f}_{-}8\mathrm{S}_{-}\mathrm{B}_{-}8$ device, whose $\mathrm{I}_{\mathrm{t}2}$ improvement rises up to 4. 529A, an significant increase of 244.41% was achieved as compared with the reference sample.

ESD-capability Study of High-voltage nLDMOSs with out the Drift Region DPW Effect

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

Improved LDMOS for ESD Protection of High Voltage BCD Process

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

ESD-Performance Enhancement of Circular Ultra-High-Voltage 300-V N-Channel Lateral-Diffused MOSFETs by Source/Drain Embedded Schottky Diodes

STUDY OF ULTRA HIGH VOLTAGE 500V NLDMOS WITH AGGRESSIVE DESIGN OF DRIFT REGION

A Modified LDMOS Device with Improved ESD Protection Performance

Layout Dependence of ESD Characteristics on High Voltage LDMOS Transistors

A Variation Laterl Doping Layer and Lightly Doped Region Compensated Superjunction LDMOS

High voltage SJ-pLDMOS with Variation Lateral Doping drift layer

Simulation study of a deep-trench LDMOS with bilateral super-junction drift regions

Comprehensive study and corresponding improvements on the ESD robustness of different nLDMOS devices

An Ultralow Specific On-Resistance 200V LDMOS for Voltage Extension of a 0.18µm BCD Process

Variation of Lateral Width Technique in SoI High-Voltage Lateral Double-Diffused Metal–Oxide–Semiconductor Transistors Using High-k Dielectric

Enhancement of Electrical Safe Operation Area of 60 V nLDMOS by Engineering of Reduced Surface Electrical Field in the Drift Region

Novel 700 V High-Voltage SOI LDMOS Structure with Folded Drift Region

Study on A Novel Trench LDMOS with Double Deep Trenches and Superjunction

1000 V breakdown voltage LDMOS with thin drift layer

Enhanced ESD-Capability of High-Voltage 32 V N-Channel LDMOSs with the Body-Side Hetero-Junction Structure

Impacts of Floating Poly on Electrostatic Discharge Protection of Power-Managed High-Voltage Laterally Diffused Metal Oxide Semiconductor Components