Abstract:As electronics become lighter, shorter and more complex, the potential damage to integrated circuits (ICs) from electrostatic discharge (ESD) becomes more severe. In many applications, high voltages will result in high electric fields and high current densities in miniaturized components, which can lead to gate oxide breakdown of circuit components and thermal damage in ICs. Therefore, ESD protection circuits are added inside the electronic product in order to prevent the above damage, but the area of the protection cell should not be too large, otherwise a large proportion of the IC manufacturing cost is spent on the protection circuit. In this paper, we investigate how to improve the ESD protection of the designed high-voltage components through TSMC’s 0. 1S-micron BCD HV process. The sample structures of this work all use high-voltage N-channel laterally diffused MOSFETs (LDMOS), and the I/O protection components can be improved by this protection architecture. First, the ESD robustness of the device is enhanced by embedding a Schottky diode in the bulk end of the nLDMOS. The Schottky diode is parasitized horizontally at the body terminal. Since the parasitic Schottky diode is at the body electrode of the device, the parasitic BJT capability is enhanced, making it easier to trigger the conductivity of the device. Therefore, the new components $\mathrm{V}_{\mathrm{t}i}$ and $\mathrm{V}_{\mathrm{h}}$ values decrease (because the horizontal parasitic Schottky is reversed so the decreasing is obvious), so that the high-voltage ESD protection components have a better performance under ESD events, this design also makes the anti-ESD capacity $\mathrm{I}_{\mathrm{t}2}$ significantly increased. In the case of the body-end horizontal (reversed) embedded Schottky element, the largest $\mathrm{I}_{\mathrm{t}2}$ is found on the $\mathrm{R}\mathrm{e}\mathrm{f}_{-}8\mathrm{S}_{-}\mathrm{B}_{-}8$ device, whose $\mathrm{I}_{\mathrm{t}2}$ improvement rises up to 4. 529A, an significant increase of 244.41% was achieved as compared with the reference sample.

ESD-Performance Enhancement of Circular Ultra-High-Voltage 300-V N-Channel Lateral-Diffused MOSFETs by Source/Drain Embedded Schottky Diodes

Enhanced ESD-Capability of High-Voltage 32 V N-Channel LDMOSs with the Body-Side Hetero-Junction Structure

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

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A Modified LDMOS Device with Improved ESD Protection Performance

ESD-capability Study of High-voltage nLDMOSs with out the Drift Region DPW Effect

Improved LDMOS for ESD Protection of High Voltage BCD Process

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Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

RC-Embedded LDMOS-SCR with High Holding Current for High-Voltage I/O ESD Protection

Layout Dependence of ESD Characteristics on High Voltage LDMOS Transistors

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Nige Metal Source/Drain Ge Pmosfets For Future High Performance Vlsi Circuits Applications

A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance

Improvement on Diode String Structure for 65-Nm RF ESD Protection

A Novel Dual-Directional DTSCR in Twin-Well Process for Ultra-Low-voltage ESD Protection

Comprehensive study and corresponding improvements on the ESD robustness of different nLDMOS devices

ESD Performance of LDMOS with Source-Bulk Layout Structure Optimization

A Low-Loss Diode Integrated SiC Trench MOSFET for Improving Switching Performance

Novel Schottky Barrier Mosfet with Dual-Layer Silicide Source/Drain Structure

Investigation on MOS shunt LVTSCR for ESD application