Abstract:Continuously scaling down and decreasing operation voltages of ICs, from the 5 V TTL-compatible voltage to 3.3 V, then 1.2 V, and now 0.8 V for low-power ICs, results in more stringent electrostatic discharge protection design requirements, such as a narrow ESD design window, low operation voltage, and high ESD robustness. Based on traditional diode string and diode-triggered silicon-controlled rectifiers, an enhanced diode-triggered silicon-controlled rectifier is proposed to meet the requirements of low-voltage integrated circuits as bidirectional electrostatic discharge protection. The new device employs an additional PMOS and NMOS in the N-well and P-well, respectively, to offer additional current paths along the surface to significantly enhance its robustness. TCAD simulation shows that the device is triggered by both the diode strings and embedded MOS, making the device turn on faster and the current distribution more uniform during the ON state owing to the additional surface current paths. The proposed new device has excellent dual-directional ESD protection performance with a figure of merit of 4.01 mA/um2, which is about a 71% improvement compared with the conventional diode-triggered silicon-controlled rectifier. It also has higher area efficiency, lower trigger voltage, lower current leakage, and a faster turn-on speed. The proposed enhanced diode-triggered silicon-controlled rectifier is an attractive ESD protection solution for ultra-low-voltage ICs.

Improvement on Diode String Structure for 65-Nm RF ESD Protection

Improved Low-Voltage-Triggered Scr Structure for Rf-Esd Protection

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Whole Chip Esd Protection for 2.4 Ghz Lna

Low-Capacitance SCR Structure for RF I/O Application

Study on ESD Effects of GaAs HBT Power Amplifiers for DCS/GSM Dual Band Handsets

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

New Electrostatic Discharge Protection Device for VBO High Speed Chip

Whole Chip ESD Protection Design for 2.4 GHz LNA

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Characterizing diodes for RF ESD protection

Robust and area-efficient nLDMOS-SCR with waffle layout structure for high-voltage ESD protection

Low-leakage Diode-Triggered Silicon Controlled Rectifier for Electrostatic Discharge Protection in 0.18-Μm CMOS Process

ESD protection design of DDSCR structure based on the 0.5 BCD process

Investigation of Boundary-Mos-triggered SCR Structures for On-Chip ESD Protection

High Area Efficiency Bidirectional Silicon-Controlled Rectifier for Low-Voltage Electrostatic Discharge Protection

Improved Turn-on Behavior in a Diode-Triggered Silicon-Controlled Rectifier for High-Speed Electrostatic Discharge Protection.

A Novel Diode String Triggered Gated-Pin Junction Device for Electrostatic Discharge Protection in 65-Nm Cmos Technology

An Investigation on Capacitance-Trigger ESD Protection Devices for High Voltage Integrated Circuits

A Modified LDMOS Device with Improved ESD Protection Performance