Abstract:The trigger voltage walk-in effect has been investigated by designing two different laterally diffused metal—oxide—semiconductor (LDMOS) transistors with an embedded silicon controlled rectifier (SCR). By inserting a P+ implant region along the outer and the inner boundary of the N+ region at the drain side of a conventional LDMOS transistor, we fabricate the LDMOS-SCR and the SCR-LDMOS devices with a different triggering order in a 0.5 μm bipolar-CMOS-DMOS process, respectively. First, we perform transmission line pulse (TLP) and DC-voltage degradation tests on the LDMOS-SCR. Results show that the trigger voltage walk-in effect can be attributed to the gate oxide trap generation and charge trapping. Then, we perform TLP tests on the SCR-LDMOS. Results indicate that the trigger voltage walk-in effect is remarkably reduced. In the SCR-LDMOS, the embedded SCR is triggered earlier than the LDMOS, and the ESD current is mainly discharged by the parasitic SCR structure. The electric potential between the drain and the gate decreases significantly after snapback, leading to decreased impact ionization rates and thus reduced trap generation and charge trapping. Finally, the above explanation of the different trigger voltage walk-in behavior in LDMOS-SCR and SCR-LDMOS devices is confirmed by TCAD simulation.

ESD Performance of LDMOS with Source-Bulk Layout Structure Optimization

Layout Dependence of ESD Characteristics on High Voltage LDMOS Transistors

A Modified LDMOS Device with Improved ESD Protection Performance

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

Robust and area-efficient nLDMOS-SCR with waffle layout structure for high-voltage ESD protection

A reduced surface current LDMOS with stronger ESD robustness

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

Optimization On Layout Strategy Of Gate-Grounded Nmos For On-Chip Esd Protection In A 65-Nm Cmos Process

A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

An Area-Efficient LDMOS-SCR ESD Protection Device for the I/O of Power IC Application

Improved LDMOS for ESD Protection of High Voltage BCD Process

Comprehensive study and corresponding improvements on the ESD robustness of different nLDMOS devices

A Novel Double RESURF LDMOS with Optimized ESD Robustness

Effect of poly-silicon gate on ESD protection performance of LDMOS-SCR devices

Impact of Parasitic Resistance on the Esd Robustness of High-Voltage Devices

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

Investigation Of Waffle Structure Scr For Electro-Static Discharge (Esd) Protection

A Novel SCR-LDMOS for High Voltage ESD Protection.

Impact of Guard Ring Layout Structure on the Voltage-Tolerance Capacity of ESD Protection Devices

Comparison of different MOS-triggered SCR structures for on-chip ESD protection