Abstract:As electronics become lighter, shorter and more complex, the potential damage to integrated circuits (ICs) from electrostatic discharge (ESD) becomes more severe. In many applications, high voltages will result in high electric fields and high current densities in miniaturized components, which can lead to gate oxide breakdown of circuit components and thermal damage in ICs. Therefore, ESD protection circuits are added inside the electronic product in order to prevent the above damage, but the area of the protection cell should not be too large, otherwise a large proportion of the IC manufacturing cost is spent on the protection circuit. In this paper, we investigate how to improve the ESD protection of the designed high-voltage components through TSMC’s 0. 1S-micron BCD HV process. The sample structures of this work all use high-voltage N-channel laterally diffused MOSFETs (LDMOS), and the I/O protection components can be improved by this protection architecture. First, the ESD robustness of the device is enhanced by embedding a Schottky diode in the bulk end of the nLDMOS. The Schottky diode is parasitized horizontally at the body terminal. Since the parasitic Schottky diode is at the body electrode of the device, the parasitic BJT capability is enhanced, making it easier to trigger the conductivity of the device. Therefore, the new components $\mathrm{V}_{\mathrm{t}i}$ and $\mathrm{V}_{\mathrm{h}}$ values decrease (because the horizontal parasitic Schottky is reversed so the decreasing is obvious), so that the high-voltage ESD protection components have a better performance under ESD events, this design also makes the anti-ESD capacity $\mathrm{I}_{\mathrm{t}2}$ significantly increased. In the case of the body-end horizontal (reversed) embedded Schottky element, the largest $\mathrm{I}_{\mathrm{t}2}$ is found on the $\mathrm{R}\mathrm{e}\mathrm{f}_{-}8\mathrm{S}_{-}\mathrm{B}_{-}8$ device, whose $\mathrm{I}_{\mathrm{t}2}$ improvement rises up to 4. 529A, an significant increase of 244.41% was achieved as compared with the reference sample.

Impact of Parasitic Resistance on the Esd Robustness of High-Voltage Devices

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

Improved LDMOS for ESD Protection of High Voltage BCD Process

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

Comprehensive study and corresponding improvements on the ESD robustness of different nLDMOS devices

A Modified LDMOS Device with Improved ESD Protection Performance

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

ESD Performance of LDMOS with Source-Bulk Layout Structure Optimization

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Robust and area-efficient nLDMOS-SCR with waffle layout structure for high-voltage ESD protection

A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

A Novel Double RESURF LDMOS with Optimized ESD Robustness

Enhanced ESD-Capability of High-Voltage 32 V N-Channel LDMOSs with the Body-Side Hetero-Junction Structure

On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

Layout Dependence of ESD Characteristics on High Voltage LDMOS Transistors

ESD-capability Study of High-voltage nLDMOSs with out the Drift Region DPW Effect

Esd Robustness Studies on the Double Snapback Characteristics of an Ldmos with an Embedded Scr

FOD Based ESD Protection Devices in Deep Sub-micron Technology